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中国物理学会期刊

HiPIMS放电脉宽对等离子体瞬态特性的影响机理研究

Influence of Pulse Duration on Plasma Characteristics in HiPIMS discharge

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  • 基于等离子体放电的表面涂层技术是现代表面工程的关键手段之一。高功率脉冲磁控溅射技术(HiPIMS)通过靶材的高电压、大电流产生高能量密度等离子体放电,实现了对溅射粒子的强电离,能够大大提高磁控溅射的离化率。靶材放电过程中HiPIMS电源的脉冲宽度对等离子体瞬态特性具有显著影响。为了探究脉冲宽度对HiPIMS放电等离子体产生与发展的影响规律与内在机理,本文通过高时间分辨率朗缪尔探针、光发射光谱诊断方法与离化区域模型IRM仿真相结合的方式,详尽获得并分析了等离子体密度、能量分布与粒子成分的时间演化特性。结果表明:当脉冲宽度从200 μs缩短至100 μs时,放电电流的峰值从~65 A提升至~154 A,同时离子密度从~3×1019 m-3提升至~6.5×1019 m-3。Langmuir探针测试发现在短脉宽条件下,脉冲初期具有较高的电子温度。IRM模拟结果表明,短脉宽放电在余辉等离子体结束时仍保持较高的Ti原子密度。而由于Ti原子电离能较低且电离系数较高,更容易在下一个负脉冲初期提供高能电子,从而增强脉冲初始阶段的电离率,进而提升等离子体放电强度。该研究为深化HiPIMS等离子体动态特性认知与涂层制备工艺优化提供了参考。

    As an advanced discharge technique, the High Power Impulse Magnetron Sputtering (HiPIMS) has the advantage of high density and high ionization degree plasma, which is widely applied in the surface engineering. However, systematic investigations into the intrinsic correlation between discharge parameters and the resulting plasma characteristics remain scarce. As an extremely important parameter, the pulse duration can affect the discharge current, plasma dynamics and ultimately the microstructure of deposited films. Recently, we have found that the peak amplitude of discharge current can strongly increase as the pulse duration becomes shorter, while the underlying physical mechanism remains elusive. In this work, to elucidate the effects of pulse duration on gas breakdown, self-sputtering behavior, and afterglow plasma dynamics, a comprehensive study combining high-time-resolution diagnostics and numerical simulation was conducted. The experiments were performed on a Ti target using a custom HiPIMS power supply, operating at fixed voltages of -600 V and -800 V, a pulse frequency of 500 Hz, and pulse durations ranging from 100 to 200 µs. Key plasma parameters were diagnosed via a Langmuir probe and Optical Emission Spectroscopy (OES), complemented by numerical simulations using the Ionization Region Model (IRM). Experimental results demonstrate that shortening the pulse duration from 200 µs to 100 µs leads to a substantial increase in the peak discharge current from ~65 A to ~154 A, accompanied by a nearly twofold increase in ion density (from ~3×1019 m-3 to ~6.5×1019 m-3). Langmuir probe measurements confirmed that more high-temperature electrons are present in the early phase of short-pulse discharges, which favors enhanced ionization. IRM simulation results further uncovered the core mechanism: short-pulse sustains a significantly higher residual Ti atom density in the afterglow phase. Benefiting from their lower ionization energy and higher ionization coefficient compared to Ar atoms, these residual Ti atoms facilitate a more intense electron avalanche at the inception of the subsequent pulse. This triggers a positive feedback loop of ionization and sputtering, thereby drastically boosting the initial ionization rate and peak discharge current. This work clarifies the intrinsic physical mechanism behind the peak current enhancement in short-pulse HiPIMS and provides a reference for deepening the understanding of HiPIMS plasma dynamic characteristics and regulating high-performance coating preparation processes.

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