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中国物理学会期刊

界面耦合弱化诱导Fe3GeTe2-C8BTBT分子器件热电优值提升与自旋电流翻转理论研究

Theoretical study on interface coupling weakening-induced enhancement of thermoelectric figure of merit and spin current reversal in Fe3GeTe2-C8BTBT molecular devices

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  • 基于第一性原理密度泛函理论(DFT)与非平衡格林函数(NEGF)方法, 本文设计并研究了两种具有不同界面耦合模式的二维铁磁材料Fe3GeTe2与有机分子C8-BTBT构成的分子尺度纳米器件, 旨在揭示界面耦合强度对器件自旋热电输运性能的影响机制. 研究表明, 界面耦合强度能直接影响界面的电荷转移与自旋输运行为: 在较强耦合模式下, 器件表现出较高的电导和热导; 而在弱耦合情况下, 电荷传输能力与热导均显著地降低. 由于热电性能中电导与热导存在相互制约关系, 弱耦合下热导受到明显抑制, 使自旋热电优值(ZTsp)从0.71提升到3.45. 特别的是, 研究还发现层间耦合可调控自旋电荷密度的分布, 导致该分子器件的自旋电流在不同耦合模式下出现显著极性翻转. 此外, 还观察到热致负微分电阻效应. 本研究通过界面耦合工程的设计, 为高效、可调控的自旋热电原型器件的开发提供了理论依据.

    Addressing the demands of global waste heat recovery and low-power spin-based information processing, this paper designs and investigates two types of molecular-scale nanodevices composed of the two-dimensional ferromagnetic material Fe3GeTe2 and the organic molecule C8-BTBT with different interfacial coupling modes. The study is based on first-principles density functional theory (DFT) and the non-equilibrium Green’s function (NEGF) method, aiming to reveal the influence mechanism by which interfacial coupling strength influences on the spin thermoelectric transport properties of the devices. The results show that the interfacial coupling strength directly affects interfacial charge transfer and spin transport behavior: the charge transfer amount is 0.766e in the strong coupling mode and decreases to 0.256e in the weak coupling mode. Under strong coupling mode, the device exhibits high electrical and thermal conductance, whereas under the weak coupling, both charge transport and thermal conductance are significantly reduced. Due to the trade-off between electrical and thermal conductance in thermoelectric performance, the markedly suppressed thermal conductance under weak couplingresults in an increase in the spin figure of merit (ZT) from 0.71 to 3.45. Notably, the study also reveals that interlayer coupling can modulate the distribution of spin charge density. This leads to a significant polarity reversal of the spin current in the molecular device under different coupling modes. In addition, a thermally induced negative differential resistance effect is observed. This study provides a theoretical basis for the development of high-efficiency and tunable spin thermoelectric prototype devices through interfacial coupling engineering.

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