搜索

x
中国物理学会期刊

1–10 MeV/u能区重离子在碳基薄膜表面的二次电子发射特性模拟研究

Simulation of Secondary Electron Emission Characteristics from Carbon Foils Bombarded by 1–10 MeV/u Heavy Ions

PDF
导出引用
  • 二次电子发射(SEE)是表面物理中的普遍现象,其实验测量受表面状态、环境条件等因素影响,精确表征存在一定难度.本文基于蒙特卡罗模拟方法,研究中低能重离子入射薄膜材料的SEE过程,旨在为加速器装置中基于SEE的束流测量探测器的设计与应用提供理论指导.以西安质子重离子应用装置中的薄膜探测器为背景,利用Geant4最新拓展的MicroElec模块,定量研究了1–10 MeV/u能区重离子在碳基薄膜上的二次电子产额(SEY)、能量及角度分布特性,并系统探讨了SEY与薄膜厚度、入射粒子能量损失率(LET)及入射角度的关系.结果显示,前向和背向SEY不一致性以及随薄膜厚度的变化均是由δ电子主导的;总产额与LET在0.1–100 keV·cm2·μg-1范围内呈近似线性关系,与前人实验数据吻合良好;前向和背向SEY随入射角度单调增加,但前向增长慢于背向,源于δ电子前向发射特性带来的非对称贡献.本文的计算结果可为基于二次电子发射的薄膜探测器提供有价值的数据支撑与理论参考.

    Secondary electron emission (SEE) is a fundamental surface phenomenon, but its accurate experimental characterization remains challenging due to the high sensitivity to surface conditions and environmental factors. This study utilizes the Monte Carlo simulation method to investigate the SEE process induced by medium- and low-energy heavy ions incident on thin foils, aiming to provide theoretical guidance for the design and application of SEE-based beam diagnostic detectors in accelerator facilities. Taking the thin foil detector for the Xi’an 200MeV Proton Application Facility (XiPAF) as the application background, we utilize the recently extended MicroElec module of Geant4 to quantitatively study the secondary electron yield (SEY), energy spectra, and angular distributions from carbon foils bombarded by heavy ions in the energy range of 1–10 MeV/u. The relationships between SEY and foil thickness, linear energy transfer (LET), and incident angle are systematically explored. Key findings are as follows:
    (1)The evolution of forward and backward SEY with foil thickness, as well as their asymmetry, is dominated by δ electron transport. In particular, forward SEY increases rapidly up to ~600 nm and then saturates, while backward SEY saturates at a smaller thickness (~300 nm), consistent with the different escape depths of δ electrons.
    (2)For a 100 nm carbon foil, the total SEY exhibits an approximately linear dependence on the incident ion’s LET over three orders of magnitude (0.1–100 keV·cm2·μg-1). After normalizing the simulated yields with SRIM‑calculated energy deposition, the fitted SEY‑LET coefficient deviates by less than 30% from the experimental data compiled by Rothard et al., which is well within the reported experimental uncertainty (a factor of two).
    (3)With increasing incident angle, both forward and backward SEY increase monotonically, but their sensitivities differ: power-law fitting yields f=0.95 for forward emission and f=1.12 for backward emission in γ(φ)=γ(0)∙(cos⁡φ)-f. This disparity originates from the forward-peaked angular distribution of δ-electrons and their asymmetric transport in the foil, corroborated by the depth distribution of emitted-electron track vertices.
    The simulated electron energy spectra and angular distributions agree well with theoretical expectations. The energy deposition calculated by MicroElec shows a deviation from SRIM results (up to 23% for low energy heavy ions), which is attributed primarily to the different effective charge models adopted by the two codes.
    This study demonstrates that the Geant4 MicroElec module is an effective tool for simulating heavy ion induced SEE in the medium and low energy regime. The systematic data and physical insights obtained here provide valuable references for the design of thin foil detectors, particularly for online monitoring of low energy heavy ion beams.

    目录

    返回文章
    返回
    Baidu
    map