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中国物理学会期刊

低压氢气下双增益厚气体电子倍增器的δ电子逃逸与离子回流抑制研究

Study on delta electrons escape and ion backflow suppression in a Dual Gain Thick Gas Electron Multiplier under low-pressure hydrogen environment

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  • 横向分区双增益厚气体电子倍增器(DG-THGEM)可在同一探测器内为束流区与反冲区提供不同的有效增益,以满足重离子束在线剂量监测对宽动态范围读出的需求。但在低压氢气强电离条件下,重离子诱发的δ电子逃逸降低电荷收集效率,离子回流加剧漂移区场畸变,从而限制增益稳定性并压缩可用工作区间。论文研究以185 MeV/u 132Xe为例,Geant4用于计算能量沉积分布、r95δ电子逃逸率;COMSOL求解孔阵列周期电场后,导入Garfield++进行电子漂移与倍增计算,在E/p约化参数下扫描漂移场、跨孔电压与感应场,建立电子透过率、有效增益与离子回流率(IBF)的响应关系。研究结果表明:随气压升高,δ电子作用范围收缩,60–80kPa下逃逸率约14.7%;将主要倍增配置至第二级THGEM并提高感应场,可在有效增益约2000、电子透过率约85%时将IBF由约50%降至约5%,达到了在δ电子逃逸约束下实现IBF有效抑制的目的。

    The transversely partitioned dual-gain Thick Gas Electron Multiplier (DG-THGEM) can provide different effective gains for the beam region and the recoil region within the same detector, thereby meeting the requirement for wide-dynamic-range readout in online heavy-ion beam dose monitoring. However, under low-pressure hydrogen and strong-ionization conditions, high-energy δ-electron escape reduces the primary charge-collection efficiency, while ion backflow (IBF) aggravates electric-field distortion in the drift region, thus limiting gain stability and narrowing the available operating window. These coupled effects make it necessary to quantitatively clarify the constraints imposed by δ-electron transport and IBF suppression on DG-THGEM operation.In this study, 185 MeV/u 132Xe was taken as a representative heavy-ion beam. Geant4 was employed to calculate the spatial energy-deposition distribution, the 95% cumulative radius (r95), and the δ-electron escape fraction in low-pressure hydrogen. Meanwhile, COMSOL Multiphysics was used to solve the periodic electric field of the THGEM hole array, and the resulting field map was imported into Garfield++ to simulate electron drift, transport through the holes, and avalanche multiplication. By scanning the reduced field (E/p), the drift field, the voltage across the THGEM holes, and the induction field, the quantitative relationships among electron transparency, effective gain, and IBF were systematically established, and the available operating region of the DG-THGEM was evaluated under the combined constraint of δ-electron escape and ion backflow.The results show that, with increasing gas pressure, the δ-electron range decreases significantly, leading to a reduced escape fraction, which becomes approximately 14.7% at 60–80 kPa. Within this pressure interval, the radial spread of deposited energy is also better confined, indicating improved primary charge retention. Simulation of electron transport and multiplication further shows that gain allocation plays a decisive role in IBF suppression. By shifting the main multiplication stage to the second THGEM and simultaneously increasing the induction field, the IBF can be reduced from about 50% to 5% while maintaining an effective gain of 2000 and an electron transparency of about 85%. These results demonstrate that the DG-THGEM can achieve a favorable balance among charge collection, gain, and ion suppression in low-pressure hydrogen.This work provides a quantitative simulation framework for evaluating the coupled effects of δ-electron escape and ion backflow in DG-THGEM detectors under strong heavy-ion irradiation. The obtained operating window and gain-allocation strategy offer useful guidance for the design and optimization of DG-THGEM-based detectors for online heavy-ion beam monitoring and dosimetry.

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