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中国物理学会期刊

应变与关联效应调控单层CeBr2谷极化行为的研究

Strain and correlation effects modUlate the valley polarization behavior in monolayer CeBr2

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  • 谷自由度作为电子内禀自由度之一,在低功耗信息器件中具有重要应用前景。实现稳定的谷极化是谷电子学发展的关键,其中铁谷材料因其本征磁有序可自发产生谷极化而备受关注。本文基于密度泛函理论,系统研究了二维CeBr2单层的结构稳定性、磁学性质、电子结构及其谷极化行为。计算表明,单层CeBr2具有良好的热力学和动力学稳定性,其磁基态为铁磁序,居里温度高于室温,且表现出明显的面内磁各向异性(MAE \approx 111\;meV\text)。自旋–轨道耦合作用引起KK′能谷退简并,在价带顶产生约38.7 meV的自发能谷劈裂,显著高于室温热涨落能量,具备室温下稳定的谷极化能力。此外,计算揭示了该材料在能谷附近具有非零的反常霍尔电导与自旋霍尔电导,支持反常谷霍尔效应的实现。通过调控Hubbard U参数与施加双轴应变,研究发现电子关联强度有利于增强磁各向异性与谷极化;而在±5%的应变范围内,谷极化与磁各向异性均可被连续调控,且铁磁基态保持稳定。本工作不仅为二维铁谷材料体系提供了一个具有大谷极化、高稳定性的新成员,也为多场调控的谷自旋电子器件设计提供了理论依据。

    The valley degree of freedom, as an intrinsic electronic property analogous to charge and spin, has emerged as a promising carrier of information in next-generation low-power and high-efficiency electronic devices. Achieving robust and controllable valley polarization is a central challenge in the development of valleytronics. Ferrovalley materials, characterized by intrinsic magnetic ordering that breaks time-reversal symmetry, are particularly attractive because they can generate spontaneous valley polarization without the need for external fields. In this work, based on first-principles calculations within the framework of density functional theory, we systematically investigate the structural stability, magnetic properties, electronic structure, and valley polarization behavior of a two-dimensional CeBr2 monolayer.
    Our results demonstrate that monolayer CeBr2 possesses excellent thermodynamic and dynamical stability, as confirmed by total energy analysis and phonon dispersion calculations. The system exhibits a ferromagnetic ground state with a Curie temperature exceeding room temperature, indicating its suitability for practical applications. In addition, a pronounced in-plane magnetic anisotropy is identified, which plays a crucial role in stabilizing long-range magnetic order in two-dimensional systems. When spin–orbit coupling is taken into account, the degeneracy between the K and K′ valleys is lifted, leading to a spontaneous valley splitting at the valence band maximum. The magnitude of this splitting is significantly larger than the thermal fluctuation energy at room temperature, ensuring robust valley polarization under ambient conditions. Furthermore, Berry curvature calculations reveal the presence of nonzero anomalous Hall conductivity and spin Hall conductivity near the valley regions, indicating that monolayer CeBr2 can host the anomalous valley Hall effect and related spin-dependent transport phenomena. These features highlight the coexistence and coupling of multiple degrees of freedom, including charge, spin, orbital, and valley, in this system.
    To explore the tunability of its physical properties, we further investigate the effects of electron correlation and external strain. By varying the Hubbard U parameter, we find that enhanced electron correlation strengthens both magnetic anisotropy and valley polarization, reflecting the important role of localized 4f electrons of Ce atoms. Meanwhile, the application of biaxial strain within a range of ±5% enables continuous modulation of valley splitting and magnetic anisotropy without altering the ferromagnetic ground state, demonstrating excellent mechanical and functional robustness. Overall, this study identifies monolayer CeBr2 as a promising two-dimensional ferrovalley material with large valley polarization, high thermal stability, and strong tunability. The results provide valuable insights into the interplay between electron correlation, spin–orbit coupling, and lattice deformation, and offer theoretical guidance for the design and optimization of multifunctional valleytronic and spintronic devices based on rare-earth halide systems.

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