-
Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt cell are investigated. The cell has a forming-free property and shows an abnormal non-polar switching behavior. A high ON/OFF resistance ratio (>105) is obtained. The resistance of the on-state is independent of cell size, which implies that a conductive filament is formed in HfO2 film. X-ray photoelectron spectroscopy is used to investigate the compositions and valences of Ni and Hf in HfO2 film for the on-state cell. The results show that there is a hybrid filament comprised of a Ni filament and an oxygen vacancy filament in the HfO2 film for the on-state.
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] -
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28]
计量
- 文章访问数:5482
- PDF下载量:405
- 被引次数:0
下载: