The defect luminescences of types IIa, Ib and Ia diamond are investigated by the low-temperature micro-photoluminescence microspectroscopy. The results show that with the increase of nitrogen content, the interstitials and vacancies are trapped by the nitrogen atoms, then the luminescences of intrinsic defects such as GR1, 533.5 nm and 580 nm centers are weakened, while the emissions of nitrogen-related such as NV and 523.7 nm centers are strengthened. After high temperature annealing, the interstitials and vacancies in diamond become movable. The NV0 center is found in the IIa diamond, and the type Ib diamond presents the only strong NV luminescence. The H3 and N3 centers are observed due to the aggregation of nitrogen in Ia diamond. In addition, the nitrogen benefits the formations of the negative defects (3H center, NV- center) as the donor atom.