Beta-gallium oxide (β-Ga₂O₃), an emerging ultrawide bandgap (~4.8 eV) semiconductor, exhibits excellent electrical properties and cost advantages, positioning it as a promising candidate for high-power, high-frequency, and optoelectronic applications. Furthermore, its superior mechanical properties, including Young's modulus of 261 GPa, mass density of 5950 kg/m³, and acoustic velocity of 6623 m/s, make it particularly attractive for realizing high-frequency micro- and nanoelectromechanical systems (M/NEMS) resonators. In this paper, we investigate the energy dissipation mechanisms in two distinct β-Ga₂O₃ NEMS resonator geometries – doubly-clamped beams (10.5-20.8 μm length) and circular drumheads (3.3-5.3 μm diameter) – through theoretical analysis, finite element model (FEM) simulations, and experimental measurements under vacuum (<50 mTorr).

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