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李辰恺, 朱金龙
cstr: 32037.14.aps.74.20250498

Optoelectronic properties of high pressure regulated transition metal chalcogenides and their heterostructures

LI Chenkai, ZHU Jinlong
cstr: 32037.14.aps.74.20250498
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  • 二维半导体过渡金属硫族化合物凭借其层数依赖的带隙、强激子效应及独特的本征谷自旋极化等特性, 成为光电子学的研究热点. 转角堆垛形成的异质结中的层间激子与莫尔条纹成为了实现相关态涌现的有效平台, 并为探索量子多体物理与关联现象的研究提供了理想平台. 针对半导体过渡金属硫族化合物及其异质结的光电性质的高压调控, 本文首先介绍了高压技术, 之后分别讨论了单体与异质结的光电性质的高压演化, 并重点探讨了: 1)在原子尺度上诱导的结构相变与在电子维度上的能带演化; 2)层间相互作用的演化与对物性的调控机制; 3)对激子束缚态的调控与机制; 4)莫尔超晶格势场的演化. 特别揭示了高压在强化层间轨道杂化、诱发奇异量子相等方面的独特优势. 最后, 展望了该领域的未来研究方向, 为量子信息器件设计、强关联电子系统模拟及新奇激子物态研究提供新思路.
    Semiconducting transition metal chalcogenides exhibit layer-dependent bandgaps, strong excitonic effects, and spin-valley coupling, positioning them as promising candidates for optoelectronic applications. In heterostructures formed by van der Waals stacking, interlayer excitons and moiré superlattices have emerged as a unique platform for exploring quantum many-body physics and correlated electronic phases. Subjecting semiconducting transition metal dichalcogenides and their heterostructures to high pressure enables precise, continuous tuning of optoelectronic properties through anisotropic lattice compression, particularly the dramatic reduction of interlayer distances, which greatly enhances interlayer orbital hybridization over traditional tuning methods. This review systematically presents diamond anvil cell techniques for in situ high-pressure characterization and analyzes the pressure-induced evolution in semiconducting transition metal dichalcogenides and their heterostructures. It focuses on four key aspects: 1) Atomic-scale structural phase transitions (e.g., layer sliding) and corresponding electronic band structure modifications, including direct-to-indirect bandgap transitions in monolayers (K-Λ crossover) and metallization/superconductivity; 2) Quantifiable enhancement of interlayer interactions revealed by layer-dependent phonon shifts and spin-orbit splitting amplification, along with the mechanisms of their influence on properties; 3) Modulation of exciton binding states and related mechanisms, covering intralayer excitons, trions and interlayer excitons; 4) Moiré potential modulation where high pressure significantly deepens potentials via interlayer compression. This review particularly highlights the unique capability of high pressure in enhancing interlayer orbital hybridization, thereby inducing exotic quantum phases. Finally, the future research directions in this field are outlined to advance quantum information device design, strongly correlated electron system simulation, and the novel excitonic state exploration.
      通信作者: 朱金龙, zhujl@sustech.edu.cn
    • 基金项目: 国家自然科学基金(批准号: 12274193, 12461160274)、广东省量子科学战略专项(批准号: GDZX2201001)、深圳市基础研究面上项目(批准号: K24205001)和材料基因组大科学装置平台重大科技基础设施项目(批准号: 2017-440300-82-01-293281/历史批准号: Z12017JY0012)资助的课题.
      Corresponding author: ZHU Jinlong, zhujl@sustech.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 12274193, 12461160274), the Quantum Science Strategic Initiative of Guangdong Province, China (Grant No. GDZX2201001), the Basic Research Program of Shenzhen Natural Science Foundation, China (Grant No. K24205001), and the Major Science and Technology Infrastructure Program of Material Genome Big-science Facilities Platform supported by Municipal Development and Reform Commission of Shenzhen, China (Grant No. 2017-440300-82-01-293281/Historical Grant No. Z12017JY0012).
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出版历程
  • 收稿日期:  2025-04-17
  • 修回日期:  2025-07-05
  • 上网日期:  2025-07-25
  • 刊出日期:  2025-09-05

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