Magnetoresistive Random Access Memory (MRAM) based on spintronic technology boasts non-volatility, high read/write speed and efficiency, compatibility with Complementary Metal-Oxide-Semiconductor (CMOS) manufacturing processes, excellent durability, and high integration density, emerging as one of the most promising storage technologies in the post-Moore era. Magnetization switching, the core operation of MRAM devices, directly determines device performance through its energy consumption, speed, and stability. Among the commonly used switching mechanisms for MRAM, the conventional magnetic field-driven magnetization switching relies on an external strong magnetic field, facing bottlenecks of high integration difficulty and high energy consumption; spin-transfer torque (STT)-driven switching requires a high critical current density, leading to severe Joule heating loss, and direct current penetration through the magnetic layer easily induces interface scattering and material damage, limiting device miniaturization, long lifespan, and stability; spin-orbit torque (SOT)-driven switching alone also requires a relatively high critical current density, which not only causes significant Joule heating loss but also aggravates enhanced spin scattering and electromigration damage at the heavy metal/ferromagnetic layer interface, reducing device writing endurance and long-term stability; voltage-controlled strain-driven switching alone can only induce a 90° magnetization rotation, requiring additional magnetic field or current assistance to achieve 180° deterministic magnetization reversal.
To address these issues, this paper proposes an MRAM cell structure based on the synergistic regulation of voltage-controlled strain and SOT clocking, and conducts a detailed analysis of the optimized design of device materials and dimensional parameters. A magnetization dynamic model of the device was established using the MuMax3 micromagnetic simulation software, and the magnetization switching behaviors of the nanomagnet under individual regulation and synergistic regulation of the voltage-controlled strain clock and the SOT clock were investigated respectively. The simulation results show that, in contrast to the inability of voltage-controlled strain alone to achieve deterministic magnetization reversal of the nanomagnet, the proposed method can realize deterministic magnetization reversal without applying an auxiliary magnetic field, thereby improving the reliability of device operation. Based on the synergistic effect of the voltage-controlled strain clock and the SOT clock, no special device structures or materials are required, which does not increase the difficulty of the fabrication process. It exhibits significant advantages of ultra-low energy consumption and fast switching speed. The research findings indicate that compared with the high energy consumption of the SOT clock alone, the synergistic regulation achieves ultra-low energy consumption for nanomagnet switching, and the operating frequency can reach more than 6 times that of the SOT-only regulation. Calculations show that the energy consumption of the multiferroic nanomagnet device per cycle is approximately 6.4 aJ/bit, which is reduced by three orders of magnitude compared with the traditional SOT regulation method, while the writing speed is faster. The present study provides important theoretical guidance and technical support for the design of low-power MRAM and magnetic storage applications.