The exchange bias (EB) effect originates from interfacial spin exchange coupling in ferromagnet/antiferromagnet heterostructures and is a key mechanism for stabilizing the reference state of magnetic memory units and reducing the power consumption of magnetic tunnel junctions. However, traditional EB systems based on collinear antiferromagnets generally suffer from limited operating temperatures, and the regulation of the bias field relies on thermal cycling with insufficient flexibility. Topological noncollinear antiferromagnets (Mn₃X, X = Sn, Ge, Ga, etc.) with Kagome lattice structures possess intrinsic time-reversal symmetry breaking, local spin splitting, ultrafast dynamics, and nearly zero stray fields, making them ideal candidates for overcoming the limitations of conventional EB systems. This work focuses on EB effect based on the noncollinear antiferromagnet Mn₃Sn. High-quality Mn₃Sn was deposited on an MgO (111) single-crystal substrate by direct-current magnetron sputtering, followed by the deposition of Permalloy (Py, NiFe) to establish AFM/FM interfacial coupling. The surface roughness, crystal structure and topological-like Hall effect (THE) of Mn₃Sn were characterized by atomic force microscopy, X-ray diffraction, and magneto-electric transport measurements in the temperature range of 180-300 K. Such heterostructures reveal a stable EB effect at room-temperature, with B_ex ≈ -1.6 mT under zero-field cooling and B_ex ≈ +1.8 mT after field cooling under +5 T (from 400K to 300K). Particularly, reversible switching of the EB direction could be achieved simply by applying an isothermal in-plane magnetic field of ±5 T at 300 K, giving B_ex ≈ ±1.6mT without thermal cycling. In addition, the interlayer coupling state preset by field cooling can be completely overwritten by a reversed isothermal magnetic field at room temperature. This behavior originates from the field-induced reorientation of the noncollinear antiferromagnetic Néel order in Mn₃Sn, which reconstructs the interfacial exchange coupling and reverses the hysteresis-loop shift of the Py layer. The above results suggest that reversible control of the EB effect in a topological noncollinear antiferromagnet/ferromagnet system can be achieved at room temperature without thermal cycling, providing a new platform for develop novel low-power antiferromagnetic spintronic devices.