Using 50% HCI as etchant, we studied the morphology of dislocation etch pits on cleavaged (0001) basal faces of PbFe12O19 single crystals grown by the fluxed method. Three kinds of etch pits are found and two of them correspond to {1010} and {1011} types of dislocations, respectively. The third kind of etch pits is related to the presence of screw dislocations which are responsible for growth mechanism. Dislocation etch pits arrays observed on (0001) faces are interpreted by applying the mechanism proposed by Matthews et al.