Ferroelectric thin films and their device applications have drawn wide attentions since the 1990s. However, due to the critical size effect, ferroelectric thin films cannot maintain their ferroelectric properties as their thickness decreases to the nanometer size or one atomic layer, posing a significant challenge to the development of related nano-electronic devices. With a naturally stable layered structure, two-dimensional materials possess many advantages such as high-quality and smooth interface without dangling bonds, no interlayer interface defects, and the ability to maintain complete physical and chemical properties even at limited atomic thickness. Thus, it is gradually realized that two-dimensional materials are a good hotbed for the two-dimensional ferroelectricity. CuInP₂S₆, α-In2Se₃, WTe₂, and other intrinsic ferroelectric 2D materials have been reported successively while artificially stacked sliding ferroelectrics such as t-BN have also emerged, which expands the types of 2D ferroelectric materials and opens a new avenue for the further miniaturization and flexibility of ferroelectric electronic devices. This article reviews the recent research progress of two-dimensional ferroelectric materials, discusses their compositional characteristics, structural features and property modulation, and also prospects their application potential and future research hotspots.