Physical mechanisms and characteristics of electron-induced single-event upsets in 28-nm bulk devices

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XU Jingyan; HU Yang; WANG Di; JIANG Xinshuai; CHEN Wei; DING Lili; XUE Yuanyuan

doi:10.7498/aps.75.20241613

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中国物理学会期刊

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XU Jingyan, HU Yang, WANG Di, JIANG Xinshuai, CHEN Wei, DING Lili, XUE Yuanyuan. Physical mechanisms and characteristics of electron-induced single-event upsets in 28-nm bulk devices. Acta Physica Sinica, 2026, 75(11): 110710. DOI: 10.7498/aps.75.20241613

Citation:

XU Jingyan, HU Yang, WANG Di, JIANG Xinshuai, CHEN Wei, DING Lili, XUE Yuanyuan. Physical mechanisms and characteristics of electron-induced single-event upsets in 28-nm bulk devices. Acta Physica Sinica, 2026, 75(11): 110710. DOI: 10.7498/aps.75.20241613

Citation:

XU Jingyan, HU Yang, WANG Di, JIANG Xinshuai, CHEN Wei, DING Lili, XUE Yuanyuan. Physical mechanisms and characteristics of electron-induced single-event upsets in 28-nm bulk devices. Acta Physica Sinica, 2026, 75(11): 110710. DOI: 10.7498/aps.75.20241613