Investigation of electro-thermal simulation and performance control in GaN Schottky barrier diodes

Abstract views: {{if !(article.articleBusiness.viewCount && article.articleBusiness.viewCount != '')}}0{{/if}}
PDF Downloads: {{if !(article.articleBusiness.pdfDownCount && article.articleBusiness.pdfDownCount != '')}}0{{/if}}
Cited By: 0

YAN Yeqiang; REN Xingang; XIAO Hui; XIA Zhaosheng; HUANG Zhixiang

doi:10.7498/aps.75.20251551

Search

x

中国物理学会期刊

Advanced Search

YAN Yeqiang, REN Xingang, XIAO Hui, XIA Zhaosheng, HUANG Zhixiang. Investigation of electro-thermal simulation and performance control in GaN Schottky barrier diodes. Acta Physica Sinica, 2026, 75(11): 110708. DOI: 10.7498/aps.75.20251551

Citation:

YAN Yeqiang, REN Xingang, XIAO Hui, XIA Zhaosheng, HUANG Zhixiang. Investigation of electro-thermal simulation and performance control in GaN Schottky barrier diodes. Acta Physica Sinica, 2026, 75(11): 110708. DOI: 10.7498/aps.75.20251551

Citation:

YAN Yeqiang, REN Xingang, XIAO Hui, XIA Zhaosheng, HUANG Zhixiang. Investigation of electro-thermal simulation and performance control in GaN Schottky barrier diodes. Acta Physica Sinica, 2026, 75(11): 110708. DOI: 10.7498/aps.75.20251551