First-principles analysis of electron mobility in chalcogen (S, Se, Te)-doped silicon

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XU Shunyang; DU Lingyan; XIANG Hui; TAN Xingyi; LI Qiang

doi:10.7498/aps.75.20251658

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XU Shunyang, DU Lingyan, XIANG Hui, TAN Xingyi, LI Qiang. First-principles analysis of electron mobility in chalcogen (S, Se, Te)-doped silicon. Acta Physica Sinica, 2026, 75(12): 120804. DOI: 10.7498/aps.75.20251658

Citation:

XU Shunyang, DU Lingyan, XIANG Hui, TAN Xingyi, LI Qiang. First-principles analysis of electron mobility in chalcogen (S, Se, Te)-doped silicon. Acta Physica Sinica, 2026, 75(12): 120804. DOI: 10.7498/aps.75.20251658

Citation:

XU Shunyang, DU Lingyan, XIANG Hui, TAN Xingyi, LI Qiang. First-principles analysis of electron mobility in chalcogen (S, Se, Te)-doped silicon. Acta Physica Sinica, 2026, 75(12): 120804. DOI: 10.7498/aps.75.20251658