Ultra-low power switching of magnetoresistive random access memory cells via synergistic regulation of voltage-controlled strain and spin-orbit torque

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GUO Baojun; YANG Xiaokuo; DOU Shuqing; CUI Huanqing; XIA Yongshun; WEI Bo

doi:10.7498/aps.75.20251661

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GUO Baojun, YANG Xiaokuo, DOU Shuqing, CUI Huanqing, XIA Yongshun, WEI Bo. Ultra-low power switching of magnetoresistive random access memory cells via synergistic regulation of voltage-controlled strain and spin-orbit torqueJ. Acta Physica Sinica, 2026, 75(7): 070706. DOI: 10.7498/aps.75.20251661

Citation:

GUO Baojun, YANG Xiaokuo, DOU Shuqing, CUI Huanqing, XIA Yongshun, WEI Bo. Ultra-low power switching of magnetoresistive random access memory cells via synergistic regulation of voltage-controlled strain and spin-orbit torqueJ. Acta Physica Sinica, 2026, 75(7): 070706. DOI: 10.7498/aps.75.20251661

Citation:

GUO Baojun, YANG Xiaokuo, DOU Shuqing, CUI Huanqing, XIA Yongshun, WEI Bo. Ultra-low power switching of magnetoresistive random access memory cells via synergistic regulation of voltage-controlled strain and spin-orbit torqueJ. Acta Physica Sinica, 2026, 75(7): 070706. DOI: 10.7498/aps.75.20251661