Modulation of electrical properties in Zn0.6Mg0.4O1–δ ferroelectric films by point defects

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ZHAO Wenjin; WU Fuhang; ZHOU Dayu; SUI Jinyang; XIAO Jingyi; TONG Yi; WANG Xinpeng

doi:10.7498/aps.75.20260016

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ZHAO Wenjin, WU Fuhang, ZHOU Dayu, SUI Jinyang, XIAO Jingyi, TONG Yi, WANG Xinpeng. Modulation of electrical properties in Zn0.6Mg0.4O1–δ ferroelectric films by point defects. Acta Physica Sinica, 2026, 75(11): 110803. DOI: 10.7498/aps.75.20260016

Citation:

ZHAO Wenjin, WU Fuhang, ZHOU Dayu, SUI Jinyang, XIAO Jingyi, TONG Yi, WANG Xinpeng. Modulation of electrical properties in Zn0.6Mg0.4O1–δ ferroelectric films by point defects. Acta Physica Sinica, 2026, 75(11): 110803. DOI: 10.7498/aps.75.20260016

Citation:

ZHAO Wenjin, WU Fuhang, ZHOU Dayu, SUI Jinyang, XIAO Jingyi, TONG Yi, WANG Xinpeng. Modulation of electrical properties in Zn0.6Mg0.4O1–δ ferroelectric films by point defects. Acta Physica Sinica, 2026, 75(11): 110803. DOI: 10.7498/aps.75.20260016