Mechanism of step current evolution in single event burnout of GaN high-electron-mobility transistors

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WANG Ziyu; LIANG Yanan; CHEN Rui; HAN Jianwei; YU Hailong

doi:10.7498/aps.75.20260122

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WANG Ziyu, LIANG Yanan, CHEN Rui, HAN Jianwei, YU Hailong. Mechanism of step current evolution in single event burnout of GaN high-electron-mobility transistors. Acta Physica Sinica, 2026, 75(11): 110807. DOI: 10.7498/aps.75.20260122

Citation:

WANG Ziyu, LIANG Yanan, CHEN Rui, HAN Jianwei, YU Hailong. Mechanism of step current evolution in single event burnout of GaN high-electron-mobility transistors. Acta Physica Sinica, 2026, 75(11): 110807. DOI: 10.7498/aps.75.20260122

Citation:

WANG Ziyu, LIANG Yanan, CHEN Rui, HAN Jianwei, YU Hailong. Mechanism of step current evolution in single event burnout of GaN high-electron-mobility transistors. Acta Physica Sinica, 2026, 75(11): 110807. DOI: 10.7498/aps.75.20260122