[1] |
Xiao You-Peng, Wang Huai-Ping, Li Gang-Long.Numerical simulation of graphene/Ag2ZnSnSe4induced p-n junction solar cell. Acta Physica Sinica, 2021, 70(1): 018801.doi:10.7498/aps.70.20201194 |
[2] |
Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping.NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica, 2021, 70(12): 128502.doi:10.7498/aps.70.20210154 |
[3] |
Huangfu Xia-Hong, Liu Shuang-Fei, Xiao Jia-Jun, Zhang Bei, Peng Xin-Cun.Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure. Acta Physica Sinica, 2021, 70(11): 118501.doi:10.7498/aps.70.20201829 |
[4] |
Liu Jie, Wang Lu, Sun Ling, Wang Wen-Qi, Wu Hai-Yan, Jiang Yang, Ma Zi-Guang, Wang Wen-Xin, Jia Hai-Qiang, Chen Hong.Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector. Acta Physica Sinica, 2018, 67(12): 128101.doi:10.7498/aps.67.20180588 |
[5] |
Zhang Zeng-Xing, Li Dong.Novel p-n junctions based on ambipolar two-dimensional crystals. Acta Physica Sinica, 2017, 66(21): 217302.doi:10.7498/aps.66.217302 |
[6] |
Zhao Jing, Yu Hui-Long, Liu Wei-Wei, Guo Jing.Analysis of the relation between spectral response and absorptivity of GaAs photocathode. Acta Physica Sinica, 2017, 66(22): 227801.doi:10.7498/aps.66.227801 |
[7] |
Fan Zheng-Fu, Tan Zhi-Yong, Wan Wen-Jian, Xing Xiao, Lin Xian, Jin Zuan-Ming, Cao Jun-Cheng, Ma Guo-Hong.Study on ultrafast dynamics of low-temperature grown GaAs by optical pump and terahertz probe spectroscopy. Acta Physica Sinica, 2017, 66(8): 087801.doi:10.7498/aps.66.087801 |
[8] |
Xu Deng.Stimulated emission properties of an organic salt-doped polymer film in microcavity. Acta Physica Sinica, 2009, 58(4): 2781-2784.doi:10.7498/aps.58.2781 |
[9] |
Wang Chong, Liu Zhao-Lin, Liu Jun-Ming, Chen Xue-Mei, Cui Hao-Yang, Xia Chang-Sheng, Yang Yu, Lu Wei.The study on the rectifying properties of oxygen non-stoichiometric La0.9Ba0.1MnO3-δ/SrTiO3:Nb p-n heterojunction. Acta Physica Sinica, 2008, 57(1): 502-507.doi:10.7498/aps.57.502 |
[10] |
Halimulati, Abai, Baishan, Aimaiti.Boundary alternating current characteristics of an ideal p-n junction diode. Acta Physica Sinica, 2008, 57(2): 1161-1165.doi:10.7498/aps.57.1161 |
[11] |
He Meng, Lü Hui-Bin, Zhou Yue-Liang, Cheng Bo-Lin, Chen Zheng-Hao, Jin Kui-Juan, Yang Guo-Zhen.Fabrication and characterization of YBa2Cu3O7-δ/SrNb0.01Ti0.99O3 p-n junctions. Acta Physica Sinica, 2005, 54(3): 1370-1372.doi:10.7498/aps.54.1370 |
[12] |
FENG XI-QI, LUO BIN-ZHANG.THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION. Acta Physica Sinica, 1980, 29(1): 1-10.doi:10.7498/aps.29.1 |
[13] |
WANG WEI-YUAN.MEASUREMENT OF CARRIER LIFETIME OF GaAs DIODES WITH p-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD. Acta Physica Sinica, 1979, 28(3): 341-349.doi:10.7498/aps.28.341 |
[14] |
.. Acta Physica Sinica, 1966, 22(7): 836-839.doi:10.7498/aps.22.836 |
[15] |
.ВЛИЯНИЕ НЕОБЕДНЕННЫХ НОСИТЕЛЕЙ ТОКА НА ОБРАТНУЮ ХАРАКТЕРИСТИКУ Р-И ПЕРЕХОДА. Acta Physica Sinica, 1966, 22(7): 781-797.doi:10.7498/aps.22.781 |
[16] |
TSCHEN DSIN-GUANG.SCHROTRAUSCHEN UND THERMISCHES RAUSCHEN IN EINER P-N-FLACHENDIODE. Acta Physica Sinica, 1965, 21(2): 383-389.doi:10.7498/aps.21.383 |
[17] |
.. Acta Physica Sinica, 1964, 20(3): 281-284.doi:10.7498/aps.20.281 |
[18] |
HO YU-PING.OUTPUT STABILITY OF LASERS. Acta Physica Sinica, 1964, 20(10): 954-969.doi:10.7498/aps.20.954 |
[19] |
YUAN KONG, CHEN NING-CHIANG.PRESSURE DEPENDENCE OF SOME TUNNELING PARAMETERS IN NARROW GALLIUM ARSENIDE P-N JUNCTIONS. Acta Physica Sinica, 1964, 20(8): 806-813.doi:10.7498/aps.20.806 |
[20] |
WANG SHOU-WU.ON THE THEORY OF INJECTION OF MINORITY CARRIERS IN p-n ALLOY JUNCTIONS. Acta Physica Sinica, 1958, 14(1): 82-94.doi:10.7498/aps.14.82 |