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Chen Lu, Li Ye-Fei, Zheng Qiao-Ling, Liu Qing-Kun, Gao Yi-Min, Li Bo, Zhou Chang-Meng.Theoretical study of atomic relaxation, surface energy, electronic structure and properties of B2- and B19'-NiTi surfaces. Acta Physica Sinica, 2019, 68(5): 053101.doi:10.7498/aps.68.20181944 |
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Yuan Jian-Mei, Hao Wen-Ping, Li Shun-Hui, Mao Yu-Liang.Density functional study on the adsorption of C atoms on Ni (111) surface. Acta Physica Sinica, 2012, 61(8): 087301.doi:10.7498/aps.61.087301 |
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Lu Min, Xu Wei-Bing, Liu Wei-Qing, Hou Chun-Ju, Liu Zhi-Yong.An atomistic simulation on melting and breaking relaxation characteristics of Ag nanorods at high temperature. Acta Physica Sinica, 2010, 59(9): 6377-6383.doi:10.7498/aps.59.6377 |
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Tian Jian-Hui, Han Xu, Liu Gui-Rong, Long Shu-Yao, Qin Jin-Qi.Investigation of the SiC nano-bar relaxation characteristics. Acta Physica Sinica, 2007, 56(2): 643-648.doi:10.7498/aps.56.643 |
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Zhang Yong-Fan, Ding Kai-Ning, Lin Wei, Li Jun-Qian.A first principle study on the geometry and the electronic structures of VC(001) relaxed surface. Acta Physica Sinica, 2005, 54(3): 1352-1360.doi:10.7498/aps.54.1352 |
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WANG PEI-LU, LIU ZHONG-YANG, ZHENG SI-XIAO, LIAO XIAO-DONG, YANG CHAO-WEN, TANG A-YOU, SHI MIAN-GONG, YANG BEI-FANG, MIAO JING-WEI.STUDIES ON THE FEATURE OF Si(111) SURFACE IMPLANTED BY NITROGEN ATOM,MOLECULE AND CLUSTER IONS. Acta Physica Sinica, 2001, 50(5): 860-864.doi:10.7498/aps.50.860 |
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LI QUN-XIANG, YANG JIN-LONG, DING CHANG-GENG, WANG KE-LIN, LI JIA-MING.ROLES OF STM TIP AND EXTERNAL ELECTRIC FIELD IN THE SINGLE ATOM MANIPULATION ON Si(111)-7×7 SURFACE. Acta Physica Sinica, 1999, 48(6): 1086-1094.doi:10.7498/aps.48.1086 |
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SHEN SAN-GUO, WAN JUN, FAN XI-QING.MULTILAYER RELAXATION OF Al SURFACE APPLICATION OF THE MODIFIED EMBEDDED ATOM POTENTIALS. Acta Physica Sinica, 1997, 46(11): 2198-2205.doi:10.7498/aps.46.2198 |
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WAN JUN, SHEN SAN-GUO, FAN XI-QING.MODIFIED EMBEDDED-ATOM METHOD FOR SIMULATING THE MULTILAYER RELAXATION AND SELF-DIFFUSION OF COPPER. Acta Physica Sinica, 1997, 46(6): 1161-1167.doi:10.7498/aps.46.1161 |
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CHEN KE-MING, ZHOU GUO-LIANG, SHENG CHI, JIANG WEI-DONG, ZHANG XIANG-JIU.THE GROWTH CHARACTERISTICS AND SURFACE RECONS-TRUCTION OF Ge/Si (111) AND Si/Ge(111). Acta Physica Sinica, 1990, 39(4): 599-606.doi:10.7498/aps.39.599 |
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LAN TIAN, XU FEI-YUE.A STUDY OF GaAs(110) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON-DIFFRACTION. Acta Physica Sinica, 1989, 38(3): 357-365.doi:10.7498/aps.38.357 |
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MEI LIANG-MO, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.THEORETICAL STUDY OF THE ELECTRONIC STRUCTURES OF Si(111) SURFACE. Acta Physica Sinica, 1989, 38(10): 1578-1584.doi:10.7498/aps.38.1578 |
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LAN TIAN, XU FEI-YUE.SURFACE ATOMIC STRUCTURE OF THE Si (111) 7×7 SURFACE STUDIED BY LOW-ENERGY ELECTRON DIFFRACTION. Acta Physica Sinica, 1989, 38(7): 1077-1085.doi:10.7498/aps.38.1077 |
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LIN ZI-JING, WANG KE-LIN.INVESTIGATION OF SURFACE PHONONS AT IDEAL, RELAXED AND 2×1 RECONSTRUCTED Si(lll) SURFACE. Acta Physica Sinica, 1989, 38(6): 891-899.doi:10.7498/aps.38.891 |
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ZHOU JUN-MING, HUANG YI, LIN ZHANG-DA.A STEEP CHANGE IN THE TEMPERATURE DEPENDENCE OF THE STICKING COEFFICIENT OF In ATOMS ON THE Si(111)4×1-In SURFACE. Acta Physica Sinica, 1984, 33(9): 1240-1245.doi:10.7498/aps.33.1240 |
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XIA JIAN-BAI.RELAXATION EFFECTS OF THE (111) SURFACE OF Si AND GaAs. Acta Physica Sinica, 1984, 33(2): 143-153.doi:10.7498/aps.33.143 |
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ZHOU JUN-MING.CHARGE TRANSFER AT In-Si (111) INTERFACE AND SURFACE ELECTROMIGRATION OF INDIUM ADATOMS. Acta Physica Sinica, 1983, 32(5): 640-647.doi:10.7498/aps.32.640 |
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