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Dan Min, Chen Lun-Jiang, He Yan-Bin, Wan Jun-Hao, Zhang Hong, Zhang Ke-Jia, Yang Yin, Jin Fan-Ya.Defect Evolution in Y0.5Gd0.5Ba2Cu3O7-δLayer by H Ion Irradiation. Acta Physica Sinica, 2023, 0(0): 0-0.doi:10.7498/aps.72.20221612 |
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Hu Ming, Liu Qing-Lin, Jia Ding-Li, Li Ming-Da.Gas-sensing properties at room temperature for the sensors based on tungsten oxide thin films sputtered on n-type ordered porous silicon. Acta Physica Sinica, 2013, 62(5): 057102.doi:10.7498/aps.62.057102 |
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Zhang Li-Li, Liu Zhan-Hui, Xiu Xiang-Qian, Zhang Rong, Xie Zi-Li.Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxy. Acta Physica Sinica, 2013, 62(20): 208101.doi:10.7498/aps.62.208101 |
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
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Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun.Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica, 2009, 58(10): 7282-7287.doi:10.7498/aps.58.7282 |
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Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao.FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon. Acta Physica Sinica, 2005, 54(5): 2256-2260.doi:10.7498/aps.54.2256 |
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Li Yang-Xian, Yang Shuai, Chen Gui-Feng, Ma Qiao-Yun, Niu Ping-Ｊuan, Chen Dong-Feng, Li Hong-Tao, Wang Bao-Yi.Investigation of the acceptor and donor in fast neutron irradiated Czochralski s ilicon. Acta Physica Sinica, 2005, 54(4): 1783-1787.doi:10.7498/aps.54.1783 |
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Chen Ming-Bo, Cui Rong-Qiang, Wang Liang-Xing, Zhang Zhong-Wei, Lu Jian-Feng, Chi Wei-Ying.p-n GaInP2/GaAs tandem solar cells*. Acta Physica Sinica, 2004, 53(11): 3632-3636.doi:10.7498/aps.53.3632 |
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KANG JUN-YONG, HUANG QI-SHENG, T.OGAWA.DEFECTS IN GaN EPILAYERS. Acta Physica Sinica, 1999, 48(7): 1372-1380.doi:10.7498/aps.48.1372 |
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LU LI-WU, ZHANG YAN-HUA, GE WEI-KUN, I.K.SOU, Y.WANG, J.WANG, Z.H.MA, W.S.CHEN, G.K.L.WONG.DEEP ELECTRON STATES IN n-TYPE Al-DOPED ZnS1-xTex GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(2): 286-293.doi:10.7498/aps.47.286 |
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GUI YONG-SHENG, CHU JUN-HAO, CAI YI, HENG GUO-ZHEN, TANG DING-YUAN.STUDY ON THE ELECTRON MOBILITY FOR EACH SUBBAND ON THE n-HgCdTe ACCUMULATED LAYER. Acta Physica Sinica, 1998, 47(8): 1354-1360.doi:10.7498/aps.47.1354 |
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Chen Kai-mao, Jin Si-xuan, Qiu Su-juan, Lü Yun-an, He Mei-feng, Lan Li-qiao.γ RADIATION DEFECTS IN SEMI-INSULATING LEC GaAa AFTER SHALLOW IMPURITY IMPLANTATION. Acta Physica Sinica, 1994, 43(8): 1344-1351.doi:10.7498/aps.43.1344 |
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LU FANG, GONG DA-WEI, SUN HENG-HUI.A STUDY OF THE INTERFACIAL DEFECTS IN MOLECULAR BEAM EPITAXIAL SILICON. Acta Physica Sinica, 1994, 43(7): 1129-1136.doi:10.7498/aps.43.1129 |
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ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
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LU FANG, SUN HENG-HUI, HUANG YUN, SHENG CHI, ZHANG ZENG-GUANG, WANG LIANG.STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION. Acta Physica Sinica, 1987, 36(6): 745-751.doi:10.7498/aps.36.745 |
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WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN.A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERS. Acta Physica Sinica, 1986, 35(5): 638-642.doi:10.7498/aps.35.638 |
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ZHU HUA-NAN, MI XIN, YU ZU-HE, JIN FU-HUI, FU PAN-MING.AN INVESTIGATION OF LASER INDUCED THERMAL GRATING IN LIQUID CRYSTAL. Acta Physica Sinica, 1984, 33(4): 568-570.doi:10.7498/aps.33.568 |
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ZHAO XUE-SHU, LI GUO-HUA, HAN HE-XIANG, WANG ZHAO-PING, TANG RU-MING, CHE RONG-ZHEN.A STUDY OF NITROGEN ISOELECTRONIC TRAPS IN GaAs. Acta Physica Sinica, 1984, 33(4): 588-592.doi:10.7498/aps.33.588 |
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DU YONG-CHANG, ZHANG YU-FENG, QIN GUO-GANG, MENG XIANG-TI.DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN. Acta Physica Sinica, 1984, 33(4): 477-485.doi:10.7498/aps.33.477 |
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GUO CHANG-LIN.OBSERVATION OF DEFECTS IN β-SILICON CARBIDE EPITAXIAL FILM. Acta Physica Sinica, 1982, 31(11): 1526-1533.doi:10.7498/aps.31.1526 |
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