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Li Yang-Fan, Guo Hong-Xia, Zhang Hong, Bai Ru-Xue, Zhang Feng-Qi, Ma Wu-Ying, Zhong Xiang-Li, Li Ji-Fang, Lu Xiao-Jie.Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2024, 73(2): 026103.doi:10.7498/aps.73.20231440 |
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Li Pei, Dong Zhi-Yong, Guo Hong-Xia, Zhang Feng-Qi, Guo Ya-Xin, Peng Zhi-Gang, He Chao-Hui.Investigation of laser-induced single event effect on SiGe BiCMOS low noise amplifiers. Acta Physica Sinica, 2024, 73(4): 044301.doi:10.7498/aps.73.20231451 |
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Yang Wei-Tao, Hu Zhi-Liang, He Huan, Mo Li-Hua, Zhao Xiao-Hong, Song Wu-Qing, Yi Tian-Cheng, Liang Tian-Jiao, He Chao-Hui, Li Yong-Hong, Wang Bin, Wu Long-Sheng, Liu Huan, Shi Guang.Neutron induced single event effects on near-memory computing architecture AI chips. Acta Physica Sinica, 2024, 73(13): 138502.doi:10.7498/aps.73.20240430 |
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Zhang Xing, Liu Yu-Lin, Li Gang, Yan Shao-An, Xiao Yong-Guang, Tang Ming-Hua.Three-dimensional numerical simulation of single event upset effect based on 55 nm DICE latch unit. Acta Physica Sinica, 2024, 73(6): 066103.doi:10.7498/aps.73.20231564 |
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Zhang Zhan-Gang, Yang Shao-Hua, Lin Qian, Lei Zhi-Feng, Peng Chao, He Yu-Juan.Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on Qinghai-Tibet Plateau. Acta Physica Sinica, 2023, 72(14): 146101.doi:10.7498/aps.72.20230161 |
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Ju An-An, Guo Hong-Xia, Zhang Feng-Qi, Liu Ye, Zhong Xiang-Li, Ouyang Xiao-Ping, Ding Li-Li, Lu Chao, Zhang Hong, Feng Ya-Hui.Simulation research on single event effect of N-well resistor. Acta Physica Sinica, 2023, 72(2): 026102.doi:10.7498/aps.72.20220125 |
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Cui Yi-Xin, Ma Ying-Qi, Shangguan Shi-Peng, Kang Xuan-Wu, Liu Peng-Cheng, Han Jian-Wei.Research on Single Event Burnout of GaN power devices with femtosecond pulsed laser. Acta Physica Sinica, 2022, 71(13): 136102.doi:10.7498/aps.71.20212297 |
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Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng.Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica, 2021, 70(11): 116102.doi:10.7498/aps.70.20202028 |
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Ji Liang-Liang, Geng Xue-Song, Wu Yi-Tong, Shen Bai-Fei, Li Ru-Xin.Laser-driven radiation-reaction effect and polarized particle acceleration. Acta Physica Sinica, 2021, 70(8): 085203.doi:10.7498/aps.70.20210091 |
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Li Hua-Mei, Hou Peng-Fei, Wang Jin-Bin, Song Hong-Jia, Zhong Xiang-Li.Single-event-upset effect simulation of HfO2-based ferroelectric field effect transistor read and write circuits. Acta Physica Sinica, 2020, 69(9): 098502.doi:10.7498/aps.69.20200123 |
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Wang Xun, Zhang Feng-Qi, Chen Wei, Guo Xiao-Qiang, Ding Li-Li, Luo Yin-Hong.Application and evaluation of Chinese spallation neutron source in single-event effects testing. Acta Physica Sinica, 2019, 68(5): 052901.doi:10.7498/aps.68.20181843 |
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Ju An-An, Guo Hong-Xia, Zhang Feng-Qi, Guo Wei-Xin, Ouyang Xiao-Ping, Wei Jia-Nan, Luo Yin-Hong, Zhong Xiang-Li, Li Bo, Qin Li.Experimental study about single event functional interrupt of ferroelectric random access memory induced by 30-90 MeV proton. Acta Physica Sinica, 2018, 67(23): 237803.doi:10.7498/aps.67.20181225 |
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Zhang Xue-Jun, Rao Jian, Deng Yang-Bao, Jiang Lian-jun, Tian Ye.Fluctuation effects of thermodynamic variables in particle-spilling-from-well model with single potential well. Acta Physica Sinica, 2014, 63(19): 193601.doi:10.7498/aps.63.193601 |
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Xiao Yao, Guo Hong-Xia, Zhang Feng-Qi, Zhao Wen, Wang Yan-Ping, Ding Li-Li, Fan Xue, Luo Yin-Hong, Zhang Ke-Ying.Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory. Acta Physica Sinica, 2014, 63(1): 018501.doi:10.7498/aps.63.018501 |
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Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi.Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing. Acta Physica Sinica, 2013, 62(17): 176106.doi:10.7498/aps.62.176106 |
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Liu Zheng, Chen Shu-Ming, Liang Bin, Liu Bi-Wei, Zhao Zhen-Yu.Research of bipolar amplification effect in single event transient. Acta Physica Sinica, 2010, 59(1): 649-654.doi:10.7498/aps.59.649 |
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Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming.Three-dimensional numerial simulation of single event upset effects in static random access memory. Acta Physica Sinica, 2009, 58(12): 8651-8656.doi:10.7498/aps.58.8651 |
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Qin Li, Bao Jing-Dong.The cooperative effect of a colloidal particle driven by a periodic signal in a harmonic potential. Acta Physica Sinica, 2009, 58(3): 1510-1516.doi:10.7498/aps.58.1510 |
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Zhang Qing-Xiang, Hou Ming-Dong, Liu Jie, Wang Zhi-Guang, Jin Yun-Fan, Zhu Zhi-Yong, Sun You-Mei.The dependence of single event upset cross-section on incident angle. Acta Physica Sinica, 2004, 53(2): 566-570.doi:10.7498/aps.53.566 |
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XIA MENG-FEN, QIU YUN-QING.STOCHASTIC DIFFUSION OF TRANSIT PARTICLES DRIVEN BY A SINGLE WAVE. Acta Physica Sinica, 1986, 35(1): 7-16.doi:10.7498/aps.35.7 |
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