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Li Yong-Kai, Liu Jin-Jin, Zhang Xin, Zhu Peng, Yang Liu, Zhang Yu-Qi, Wu Huang-Yu, Wang Zhi-Wei.Doping effects of Kagome superconductorAV3Sb5(A= K, Rb, Cs). Acta Physica Sinica, 2024, 73(6): 067401.doi:10.7498/aps.73.20231954 |
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Mi Hao-Ting, Yang An-Ping, Huang Zi-Xuan, Tian Kang-Zhen, Li Yue-Bing, Ma Cheng, Liu Zi-Jun, Shen Xiang, Yang Zhi-Yong.Preparation and properties of Ga2S3-Sb2S3-Ag2S chalcogenide glasses and fibers. Acta Physica Sinica, 2023, 72(4): 047101.doi:10.7498/aps.72.20221380 |
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Huang Hao, Niu Ben, Tao Ting-Ting, Luo Shi-Ping, Wang Ying, Zhao Xiao-Hui, Wang Kai, Li Zhi-Qiang, Dang Wei.Ultrafast carrier kinetics at surface and interface of Sb2Se3film by transient reflectance. Acta Physica Sinica, 2022, 71(6): 066402.doi:10.7498/aps.71.20211714 |
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Yan Jun, Wang Zi-Yi, Zeng Ruo-Sheng, Zou Bing-Suo.Zero-dimensional Sb3+doped Rb7Bi3Cl16metal halides with triplet self-trapped exciton emission. Acta Physica Sinica, 2021, 70(24): 247801.doi:10.7498/aps.70.20211024 |
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Zhu Xiao-Qin, Hu Yi-Feng.Application of Ge50Te50/Zn15Sb85nanocomposite multilayer films in high thermal stability and low power phase change memory. Acta Physica Sinica, 2020, 69(14): 146101.doi:10.7498/aps.69.20200502 |
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Tian Man-Man, Wang Guo-Xiang, Shen Xiang, Chen Yi-Min, Xu Tie-Feng, Dai Shi-Xun, Nie Qiu-Hua.Phase change properties of ZnSb-doped Ge2Sb2Te5 films. Acta Physica Sinica, 2015, 64(17): 176802.doi:10.7498/aps.64.176802 |
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Guan Tong, Teng Jing, Wu Ke-Hui, Li Yong-Qing.Linear magnetoresistance in topological insulator (Bi0.5Sb0.5)2Te3 thin films. Acta Physica Sinica, 2015, 64(7): 077201.doi:10.7498/aps.64.077201 |
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Sun Jing-Yang, Wang Dong-Ming, Lü Ye-Gang, Wang Miao, Wang Yi-Man, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun.Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memory. Acta Physica Sinica, 2015, 64(1): 016103.doi:10.7498/aps.64.016103 |
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Sun Zheng, Chen Shao-Ping, Yang Jiang-Feng, Meng Qing-Sen, Cui Jiao-Lin.Thermoelectric properties of chalcopyrite Cu3Ga5Te9 with Sb non-isoelectronic substitution for Cu and Te. Acta Physica Sinica, 2014, 63(5): 057201.doi:10.7498/aps.63.057201 |
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Wang Zhi-Long, Zheng Gui-Seng, Wang Shi-Qin, Qin Qing-Song, Zhou Hong-Liang, Zhang Jia-Chi.The luminescence properties of a novel electron trapped material Sr2SnO4:Sb3+ for optical storage. Acta Physica Sinica, 2012, 61(12): 127805.doi:10.7498/aps.61.127805 |
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Sun Wei-Feng, Li Mei-Cheng, Zhao Lian-Cheng.Phonon band structure and electron-phonon interactions in Ga and Sb nanowires: a first-principles study. Acta Physica Sinica, 2010, 59(10): 7291-7297.doi:10.7498/aps.59.7291 |
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Zhu Hang-Tian, Liu Quan-Lin, Liang Jing-Kui, Rao Guang-Hui, Zhang Fan, Luo Jun.Synthesis and characterization of Sb2Te3 nanostructures. Acta Physica Sinica, 2010, 59(10): 7232-7238.doi:10.7498/aps.59.7232 |
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Liao Yuan-Bao, Xu Ling, Yang Fei, Liu Wen-Qiang, Liu Dong, Xu Jun, Ma Zhong-Yuan, Chen Kun-Ji.Study of structural and electrical properties of phase-change materials Ge1Sb2Te4 and Ge2Sb2Te5 thin films. Acta Physica Sinica, 2010, 59(9): 6563-6568.doi:10.7498/aps.59.6563 |
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Zuo Fang-Yuan, Wang Yang, Wu Yi-Qun, Lai Tian-Shu.Study of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 film by femtosecond-resolved reflectivity spectroscopy. Acta Physica Sinica, 2009, 58(10): 7250-7254.doi:10.7498/aps.58.7250 |
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Yu Wei-Yang, Tang Bi-Yu, Peng Li-Ming, Ding Wen-Jiang.Electronic structure and mechanical properties of α-Mg3Sb2. Acta Physica Sinica, 2009, 58(13): 216-S223.doi:10.7498/aps.58.216 |
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Xu Min, Sheng Wen, Gao Zhan, Zhao Liang-Lei, Jiang Bei, Yang Lei, Zhang Lan-Ting.Characterisation of the crystal structure of La0.4FeCo3Sb12 by means of x-ray and electron diffractions. Acta Physica Sinica, 2005, 54(7): 3302-3306.doi:10.7498/aps.54.3302 |
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LONG XIANG, ZHU DING-HUE, LIU ZHI-YI.THE EXISTENT STATE OF Ce IN LOW OXYGEN-AND LOW SULFUR-CONTENT IRON AND THE EFFECT OF Ce ON Fe-Sb ALLOY. Acta Physica Sinica, 1984, 33(5): 689-693.doi:10.7498/aps.33.689 |
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Liu Yi-huan;Tao Zu-cong.FORMATION AND DEVELOPMENT OF SUBSTRUCTUR IN ALUMINIUM CRTSTALS STRAINED AT HIGH TEMPERATURES. Acta Physica Sinica, 1956, 12(6): 550-558.doi:10.7498/aps.12.550 |
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