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Liu Jie, Wang Lu, Sun Ling, Wang Wen-Qi, Wu Hai-Yan, Jiang Yang, Ma Zi-Guang, Wang Wen-Xin, Jia Hai-Qiang, Chen Hong.Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector. Acta Physica Sinica, 2018, 67(12): 128101.doi:10.7498/aps.67.20180588 |
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Li Qun, Qu Yuan, Ban Shi-Liang.Buffer layer influence on light absorption of electron intersubband transition in binary energy level systems of quantum wells. Acta Physica Sinica, 2017, 66(7): 077301.doi:10.7498/aps.66.077301 |
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Zhao Feng-Qi, Zhang Min, Li Zhi-Qiang, Ji Yan-Ming.Effects of optical phonon and built-in electric field on the binding energy of bound polarons in a wurtzite In0.19Ga0.81N/GaN quantum well. Acta Physica Sinica, 2014, 63(17): 177101.doi:10.7498/aps.63.177101 |
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Chen Qian, Wang Hai-Long, Wang Hui, Gong Qian, Song Zhi-Tang.Electron-LO phonon scattering in Ga1-xInxNyAs1-y/GaAs quantum well. Acta Physica Sinica, 2013, 62(22): 226301.doi:10.7498/aps.62.226301 |
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Li Ming, Zhang Rong, Liu Bin, Fu De-Yi, Zhao Chuan-Zhen, Xie Zhi-Li, Xiu Xiang-Qian, Zheng You-Dou.Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum wells. Acta Physica Sinica, 2012, 61(2): 027103.doi:10.7498/aps.61.027103 |
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Hu Chang-Cheng, Ye Hui-Qi, Wang Gang, Liu Bao-Li.Spatiotemporal dynamics of photogenerated carriers in GaAs/AlGaAs multiple quantum wells. Acta Physica Sinica, 2011, 60(1): 017803.doi:10.7498/aps.60.017803 |
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Song Ying-Xin, Zheng Wei-Min, Liu Jing, Chu Ning-Ning, Li Su-Mei.Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells. Acta Physica Sinica, 2009, 58(9): 6471-6476.doi:10.7498/aps.58.6471 |
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao.Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands. Acta Physica Sinica, 2008, 57(4): 2481-2485.doi:10.7498/aps.57.2481 |
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Guo Shao-Ling, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Chu Jun-Hao.Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands. Acta Physica Sinica, 2008, 57(6): 3818-3822.doi:10.7498/aps.57.3818 |
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Zhang Hong, Liu Lei, Liu Jian-Jun.Binding energies of excitons in symmetrical GaAs/Al0.3Ga0.7As double quantum wells. Acta Physica Sinica, 2007, 56(1): 487-490.doi:10.7498/aps.56.487 |
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Wang Chong, Liu Zhao-Lin, Chen Ping-Ping, Cui Hao-Yang, Xia Chang-Sheng, Yang Yu, Lu Wei.Strain-driven alloy decomposition of In0.15Ga0.85As well layers in InAs/In0.15Ga0.85As dots-in-a-well structure. Acta Physica Sinica, 2007, 56(9): 5418-5423.doi:10.7498/aps.56.5418 |
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Li Liang-Xin, Hu Yong-Hua.Intersubband and intraband transitions of self-assembled quantum wires for the infrared detectors. Acta Physica Sinica, 2005, 54(2): 848-856.doi:10.7498/aps.54.848 |
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LU LI-WU, ZHANG YAN-HUA, YANG GUO-WEN, WANG ZHAN-GUO, J.WANG, Y.WANG, WEIKUN GE.CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES. Acta Physica Sinica, 1998, 47(8): 1339-1345.doi:10.7498/aps.47.1339 |
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ZHU WEN-ZHANG, SHEN QI-HUA.PHOTOVOLTAGE SPECTROSCOPY STUDY OF GaAs/AIGaAs MULTIPLE QUANTUM WELLS. Acta Physica Sinica, 1996, 45(2): 258-264.doi:10.7498/aps.45.258 |
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XU ZHI-ZHONG.INTERSUBBAND ABSORPTION COEFFICIENTS IN A QUANTUM WELL Ge0.3Si0.7/Si/Ge0.3Si0.7 WITH BARRIER-δ-DOPING. Acta Physica Sinica, 1996, 45(10): 1762-1770.doi:10.7498/aps.45.1762 |
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PAN SHI-HONG, HUANG HUI, ZHANG CUN-ZHOU, R. N. SACKS.BAND-EDGE DISCONTINUITIES AND COUPLING BETWEEN WELLS FOR GaAs/Al0.23Ga0.77As DOUBLE QUANTUM WELLS. Acta Physica Sinica, 1992, 41(8): 1322-1329.doi:10.7498/aps.41.1322 |
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XIE YUAN-LIN, CHEN ZHENG-HAO, ZHOU YUE-LIANG, YANG GUO-ZHEN, GU SHI-JIE.A METHOD FOR OBTAINING THE DISPERSION RELATION OF THE REFRACTIVE INDEX NEAR THE BAND-GAP OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS MATERIALS. Acta Physica Sinica, 1990, 39(6): 135-141.doi:10.7498/aps.39.135 |
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ZHU JIA-LIN, TANG DAO-HUA, XIONG JIA-JIONG, GU BING-LIN.SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD. Acta Physica Sinica, 1989, 38(3): 385-393.doi:10.7498/aps.38.385 |
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JIA WEI-YI, LU ZHI-DONG, HUANG YI, ZHOU JUN-MING, LI YUNG-KANG, WANG YAN-YUN.PHOTOLUMINESCENCE DIAGNOSIS OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS. Acta Physica Sinica, 1988, 37(6): 906-915.doi:10.7498/aps.37.906 |
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XU ZHONG-YING, LI YU-ZHANG, XU JUN-YING, XU JI-ZONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA, GE WEI-KUN.HOT CARRIER RELAXATION PROCESSES IN GaAs-GaAlAs MULTIPLE QUANTUM WELL STRUCTURES. Acta Physica Sinica, 1987, 36(10): 1336-1343.doi:10.7498/aps.36.1336 |