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Sun Hai-Ming.Effects of Bi2Te3(111) and Al2O3(0001) substrates on electronic and topological properties of Bi(111) bilayer. Acta Physica Sinica, 2022, 71(13): 137101.doi:10.7498/aps.71.20220060 |
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Hu Jie-Qiong, Xie Ming, Chen Jia-Lin, Liu Man-Men, Chen Yong-Tai, Wang Song, Wang Sai-Bei, Li Ai-Kun.First principles study of electronic and elastic properties of Ti3AC2 (A = Si, Sn, Al, Ge) phases. Acta Physica Sinica, 2017, 66(5): 057102.doi:10.7498/aps.66.057102 |
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Chen Gong-Bao, Lu Wen-Jiang, Tang Fu-Ling, Xie Yong.Liquid-like structure and self-diffusion channels on Al surfaces. Acta Physica Sinica, 2011, 60(6): 066801.doi:10.7498/aps.60.066801 |
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Cao Liang, Zhang Wen-Hua, Chen Tie-Xin, Han Yu-Yan, Xu Fa-Qiang, Zhu Jun-Fa, Yan Wen-Sheng, Xu Yang, Wang Feng.The molecular orientation and electronic structure of 3, 4, 9, 10-perylene tetracarboxylic dianhydride grown on Au(111). Acta Physica Sinica, 2010, 59(3): 1681-1688.doi:10.7498/aps.59.1681 |
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Zhang Jian-Jun, Zhang Hong.A low coverage investigation on Al adsorption on the (111) surface of Pt, Ir and Au. Acta Physica Sinica, 2010, 59(6): 4143-4149.doi:10.7498/aps.59.4143 |
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Dou Wei-Dong, Huang Han, Zhang Han-Jie, Song Fei, Li Hai-Yang, He Pi-Mo, Bao Shi-Ning, Chen Qiao, Zhou Wu-Zong.Electronic and structural investigation of tetracene adsorbed on Ru(1010) surface. Acta Physica Sinica, 2007, 56(7): 4262-4269.doi:10.7498/aps.56.4262 |
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Zhou Jian-Ping, Chen Nuo-Fu, Song Shu-Lin, Chai Chun-Lin, Yang Shao-Yan, Liu Zhi-Kai, Lin Lan-Ying.Magnetic properties and rectifying behaviour of silicon doped with gadolinium. Acta Physica Sinica, 2003, 52(6): 1469-1473.doi:10.7498/aps.52.1469 |
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Li Yan-Ling, Luo Cheng-Lin.. Acta Physica Sinica, 2002, 51(11): 2589-2594.doi:10.7498/aps.51.2589 |
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YAN LONG, ZHANG YONG-PING, PENG YI-PING, PANG SHI-JIN, GAO HONG-JUN.THE PREFERENTIAL ADSORPTION OF Ge ON Si(111)7×7 SURFACE. Acta Physica Sinica, 2001, 50(11): 2132-2136.doi:10.7498/aps.50.2132 |
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FAN CHAO-YANG, ZHANG XUN-SHENG, TANG JING-CHANG, SUI HUA, XU YA-BO, XU SHI-HONG, PAN HAI-BIN, XU PENG-SHOU.INVESTIGATION OF Na/Si(111)3×1 SURFACE STRUCTURE USING NEXAFS. Acta Physica Sinica, 1997, 46(5): 953-958.doi:10.7498/aps.46.953 |
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ZHANG HAI-FENG, LI YONG-PING, FANG RONG-CHUAN, BAN DA-YAN.ELECTRONIC STRUCTURE OF ALKALI-METALS ADSORBED ON CdTe(111) SURFACES. Acta Physica Sinica, 1996, 45(12): 2047-2053.doi:10.7498/aps.45.2047 |
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ZHANG XUN-SHENG, FAN CAO-YANG, SUI HUA, BAO SHI-NING, XU YA-BO, XU SHI-HONG, PAN HAI-BIN, XU PENG-SHOU.STUDIES OF Na ADSORBED ORDERLY AND DISORDERLY ON Si(111) SURFACE USING PES. Acta Physica Sinica, 1996, 45(7): 1244-1248.doi:10.7498/aps.45.1244 |
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Zhang Hai-Feng, Li Yong-Peng, Fang Rong-Chuan, Yang Feng-Yuan, Xu Peng-Shou.. Acta Physica Sinica, 1995, 44(2): 280-286.doi:10.7498/aps.44.280 |
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MEI LIANG-MO, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.THEORETICAL STUDY OF THE ELECTRONIC STRUCTURES OF Si(111) SURFACE. Acta Physica Sinica, 1989, 38(10): 1578-1584.doi:10.7498/aps.38.1578 |
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LAN TIAN, XU FEI-YUE.SURFACE ATOMIC STRUCTURE OF THE Si (111) 7×7 SURFACE STUDIED BY LOW-ENERGY ELECTRON DIFFRACTION. Acta Physica Sinica, 1989, 38(7): 1077-1085.doi:10.7498/aps.38.1077 |
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WANG XIANG-DONG, HU JI-HUANG, DAI DAO-XUAN.TOTAL CURRENT SPECTROSCOPY STUDY ON CLEAN Si(111)7×7 SURFACE. Acta Physica Sinica, 1988, 37(11): 1888-1892.doi:10.7498/aps.37.1888 |
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CHEN YUN-QI, ZHENG DE-JUAN, CAO PEI-LIN, WU YUE.INVESTIGATION OF CO AND NO CHEMISORPTION ON THE Ⅷ GROUP TRANSITION METAL SURFACE BY Xα-DV METHOD(Ⅰ)——ELECTRONIC STRUCTURE OF CHEMISOPTION OF CO ON Rh(111) SURFACE. Acta Physica Sinica, 1985, 34(10): 1299-1305.doi:10.7498/aps.34.1299 |
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XU YONG-NIAN, ZHANG KAI-MING.THE GROUP Ⅶ ELEMENTS CHEMISORPTION ON Si(111) AND Ge (111) SURFACES. Acta Physica Sinica, 1984, 33(11): 1619-1623.doi:10.7498/aps.33.1619 |
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XU YONG-NIAN, ZHANG KAI-MING.STUDIES OF HYDROGEN ADSORPTION ON Al(111) AND Ag(111) SURFACES BY EHT METHOD. Acta Physica Sinica, 1983, 32(7): 911-916.doi:10.7498/aps.32.911 |
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ZHANG KAI-MING, YE LING.CHLORINE CHEMISORPTION ON THE SILICON AND GERMANIUM SURFACE. Acta Physica Sinica, 1980, 29(12): 1596-1603.doi:10.7498/aps.29.1596 |
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