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Wang Hai-Ling, Wang Ting, Zhang Jian-Jun.Controllable growth of InAs quantum dots on patterned GaAs (001) substrate. Acta Physica Sinica, 2019, 68(11): 117301.doi:10.7498/aps.68.20190317 |
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Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng.Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica, 2016, 65(12): 127401.doi:10.7498/aps.65.127401 |
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Wei Pang, Li Kang, Feng Xiao, Ou Yun-Bo, Zhang Li-Guo, Wang Li-Li, He Ke, Ma Xu-Cun, Xue Qi-Kun.Growth of micro-devices of topological insulator thin films by molecular beam epitaxy on substrates pre-patterned with photolithography. Acta Physica Sinica, 2014, 63(2): 027303.doi:10.7498/aps.63.027303 |
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Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun.Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica, 2014, 63(2): 027401.doi:10.7498/aps.63.027401 |
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Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming.High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2013, 62(5): 058101.doi:10.7498/aps.62.058101 |
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Wu Chen-Yang, Gu Jin-Hua, Feng Ya-Yang, Xue Yuan, Lu Jing-Xiao.The characterization of hydrogenated amorphous silicon and epitaxial silicon thin films grown on crystalline silicon substrates by using spectroscopic ellipsometry. Acta Physica Sinica, 2012, 61(15): 157803.doi:10.7498/aps.61.157803 |
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Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2011, 60(2): 028101.doi:10.7498/aps.60.028101 |
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Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
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Zhang Ying-Tang, He Meng, Chen Zi-Yu, Lü Hui-Bin.Epitaxial growth of La0.67Sr0.33MnO3 on glass by laser molecular beam epitaxy. Acta Physica Sinica, 2009, 58(3): 2002-2004.doi:10.7498/aps.58.2002 |
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He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin.Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica, 2008, 57(2): 1236-1240.doi:10.7498/aps.57.1236 |
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Yan Feng-Ping, Zheng Kai, Wang Lin, Li Yi-Fan, Gong Tao-Rong, Jian Shui-Sheng, K. Ogata, K. Koike, S. Sasa, M. Inoue, M. Yano.Measurement of thickness and refractive index of Zn1-xMgxO film grown on sapphire substrate by molecular beam epitaxy. Acta Physica Sinica, 2007, 56(7): 4127-4131.doi:10.7498/aps.56.4127 |
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Wang Jian-Ping, Hao Yue, Peng Jun, Zhu Zuo-Yun, Zhang Yong-Hua.. Acta Physica Sinica, 2002, 51(8): 1793-1797.doi:10.7498/aps.51.1793 |
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LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN.EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica, 2000, 49(6): 1132-1135.doi:10.7498/aps.49.1132 |
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NIU ZHI-CHUAN, ZHOU ZENG-QI, WU RONG-HAN, FENG SONG-LIN, R.NOETZEL, U.JAHN, K.H.PLOOG.FORMATION OF GaAs UNIFORM DOT STRUCTURES GROWN BY MBE ON PATTERNED SUBSTRATES. Acta Physica Sinica, 1998, 47(8): 1346-1353.doi:10.7498/aps.47.1346 |
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YANG SHI-E, MA BING-XIAN, JIA YU, SHEN SAN-GUO, FAN XI-QING.ELECTRONIC STRUCTURE OF THE ZnSe/GaAs(100) INTERFACES. Acta Physica Sinica, 1998, 47(10): 1704-1712.doi:10.7498/aps.47.1704 |
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YAO JIANG-HONG, ZOU YUN-JUAN, ZHANG XING-WANG, CHEN GUANG-HUA.THE ORIENTED GROWTH OF C60 FILMS-ON GaAs(100) SUBSTRATE. Acta Physica Sinica, 1997, 46(3): 481-485.doi:10.7498/aps.46.481 |
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MAO HUI-BING, LU WEI, MA ZHAO-HUI, LIU XING-QUAN, SHEN XUE-CHU.MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE. Acta Physica Sinica, 1994, 43(7): 1118-1122.doi:10.7498/aps.43.1118 |
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Lü HONG-QIANG, WANG JIE, SHEN JUN, LIU YONG, WANG XUN, WANG CHANG-PING, WANG JIAN-BAO, LI CHEN, SHEN XIAO-LIANG.EFFECT OF SUBSTRATE TEMPERATURE ON ZnSe FILMS GROWN BY HOT WALL EPITAXY. Acta Physica Sinica, 1992, 41(8): 1308-1314.doi:10.7498/aps.41.1308 |
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ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
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ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |
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