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Deng Quan, Ma Yong, Yang Xiao-Hong, Ye Li-Juan, Zhang Xue-Zhong, Zhang Qi, Fu Hong-Wei.Photoluminescence and Raman properties of Sb-doped ZnO thin film. Acta Physica Sinica, 2012, 61(24): 247701.doi:10.7498/aps.61.247701 |
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Fang Qing-Qing, Wang Wei-Na, Zhou Jun, Wang Sheng-Nan, Yan Fang-Liang, Liu Yan-Mei, Li Yan, Lü Qing-Rong.Photoluminescence characteristics of Zn1-xMgxO films. Acta Physica Sinica, 2009, 58(8): 5836-5841.doi:10.7498/aps.58.5836 |
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Zhang Bao-Ling, He Zhi-Bing, Wu Wei-Dong, Liu Xing-Hua, Yang Xiang-Dong.Influence of duty ratio on the fabrication of a-C:H film on microshell. Acta Physica Sinica, 2009, 58(9): 6436-6440.doi:10.7498/aps.58.6436 |
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Yuan Yan-Hong, Hou Xun, Gao Heng.Effect of ultrasonic treatment on ZnO film photoluminescence. Acta Physica Sinica, 2006, 55(1): 446-449.doi:10.7498/aps.55.446 |
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Zhang Xi-Tian, Xiao Zhi-Yan, Zhang Wei-Li, Gao Hong, Wang Yu-Xi, Liu Yi-Chun, Zhang Ji-Ying, Xu Wu.A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films. Acta Physica Sinica, 2003, 52(3): 740-744.doi:10.7498/aps.52.740 |
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Zhang De-Heng, Wang Qing-Pu, Xue Zhong-Ying.Ultra violet photoluminescenc of ZnO films on different substrates. Acta Physica Sinica, 2003, 52(6): 1484-1487.doi:10.7498/aps.52.1484 |
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Yang Shen-Dong, Ning Zhao-Yuan, Huang Feng, Cheng Shan-Hua, Ye Chao.. Acta Physica Sinica, 2002, 51(6): 1321-1325.doi:10.7498/aps.51.1321 |
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Huang Song, Xin Yu, Ning Zhao-Yuan, Cheng Shan-Hua, Lu Xin-Hua.. Acta Physica Sinica, 2002, 51(11): 2635-2639.doi:10.7498/aps.51.2635 |
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Xin Yu, Ning Zhao-Yuan, Cheng Shan-Hua, Lu Xin-Hua, Wang Mei-Fu, Xu Sheng-Hua, Ye Chao, Huang Song, Du Wei.. Acta Physica Sinica, 2002, 51(8): 1865-1869.doi:10.7498/aps.51.1865 |
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XIN YU, NING ZHAO-YUAN, GAN ZHAO-QIANG, LU XIN-HUA, FANG LIANG, CHENG SHAN-HUA.INFRARED ANALYSIS OF BOND CONFIGURATION FOR THE a-C∶F∶H FILMS DEPOSITED AT VARIABLE CHF3/CH4 FLOW RATIOS. Acta Physica Sinica, 2001, 50(12): 2492-2496.doi:10.7498/aps.50.2492 |
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TONG SONG, LIU XIANG-NA, GAO TING, YIN HAO, CHEN YI-JUN, BAO XI-MAO.INTENSE ULTRAVIOLET PHOTOLUMINESCENCE AT ROOM TEMPERATURE IN AS-DEPOSITED Si∶H∶O FILMS. Acta Physica Sinica, 1999, 48(2): 378-384.doi:10.7498/aps.48.378 |
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LIU MING, HE YU-LIANG, JIANG XING-LIU, LI GUO-HUA, HAN HE-XIANG.PHOTOLUMINESCENCE STUDY ON HYDROGENATED NANO-CRYSTALLINE SILICON FILM. Acta Physica Sinica, 1998, 47(5): 864-870.doi:10.7498/aps.47.864 |
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MA ZHI-XUN, LIAO XIAN-BO, HE JIE, CHENG WEN-CHAO, YUE GUO-ZHEN, WANG YONG-QIAN, DIAO HONG-WEI, KONG GUANG-LIN.ANNEALING BEHAVIORS OF PHOTOLUMINESCENCE FROM SiOx∶H FILMS. Acta Physica Sinica, 1998, 47(6): 1033-1040.doi:10.7498/aps.47.1033 |
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CHENG YU-HANG, WU YI-PING, CHEN JIAN-GUO, QIAO XUE-LIANG, XIE CHANG-SHENG, YANG YE-ZHI, MUO SHAO-BO.STUDY ON THE STRUCTURE OF a-C∶H(N) FILMS BY XPS. Acta Physica Sinica, 1998, 47(1): 83-88.doi:10.7498/aps.47.83 |
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CHEN GUANG-HUA, ZHANG YANG, YAN HUI.PHOTOLUMINESCENCE CHARACTERISTICS AND GROWTH-OF TEXTURED C60 FILMS. Acta Physica Sinica, 1997, 46(7): 1375-1379.doi:10.7498/aps.46.1375 |
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LIN JUN, ZHANG LI-ZHU, ZHANG BO-RUI, ZONG BO-QING, QIN GUO-GANG, XU ZHEN-HUA.PHOTOLUMINESCENCE OF POROUS SILICON PROCESSED IN H2O2 UNDER ILLUMINATION. Acta Physica Sinica, 1994, 43(4): 646-650.doi:10.7498/aps.43.646 |
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HUANG XU-GUANG, WANG HE-ZHOU, SHE WE-LONG, LI QING-XING, YU ZHEN-XIN, JIN BO, PENG SHAO-QI.PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS. Acta Physica Sinica, 1991, 40(10): 1677-1682.doi:10.7498/aps.40.1677 |
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PENG SHAO-QI, LIU GUO-HONG.AN INVESTIGATION ON HYDROGEN EVOLUTION AND IR ABSORPTION OF a-C:H FILMS. Acta Physica Sinica, 1988, 37(7): 1209-1212.doi:10.7498/aps.37.1209 |
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MA HONG-LEI, ZHOU YU-FANG, LI DUN-YIN.EFFECTS OF BONDED HYDROGEN ON THE PHOTOLUMINESCENCE PROPERTIES OF GD a-Si:H THIN FILMS. Acta Physica Sinica, 1986, 35(6): 725-730.doi:10.7498/aps.35.725 |
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