[1] |
Ma Meng-Yu, Yu Cui, He Ze-Zhao, Guo Jian-Chao, Liu Qing-Bin, Feng Zhi-Hong.Growth and surface structrue of hydrogen terminal diamond thin films. Acta Physica Sinica, 2024, 73(8): 088101.doi:10.7498/aps.73.20240053 |
[2] |
Li Jun-Peng, Ren Ze-Yang, Zhang Jin-Feng, Wang Han-Xue, Ma Yuan-Chen, Fei Yi-Fan, Huang Si-Yuan, Ding Sen-Chuan, Zhang Jin-Cheng, Hao Yue.Formation mechanism and regulation of silicon vacancy centers in polycrystalline diamond films. Acta Physica Sinica, 2023, 72(3): 038102.doi:10.7498/aps.72.20221437 |
[3] |
Ai Li-Qiang, Zhang Xiang-Xiong, Chen Min, Xiong Da-Xi.Deposition and thermal conductivity of diamond-like carbon film on a silicon substrate. Acta Physica Sinica, 2016, 65(9): 096501.doi:10.7498/aps.65.096501 |
[4] |
Zhang Chuan-Guo, Yang Yong, Hao Ting, Zhang Ming.Molecular dynamics simulations on the growth of thin amorphous hydrogenated carbon films on diamond surface. Acta Physica Sinica, 2015, 64(1): 018102.doi:10.7498/aps.64.018102 |
[5] |
Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin.Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica, 2008, 57(9): 6007-6012.doi:10.7498/aps.57.6007 |
[6] |
Ma Tian-Bao, Hu Yuan-Zhong, Wang Hui.Growth mechanism of diamond-like carbon film based on the simulation model of atomic motion. Acta Physica Sinica, 2007, 56(1): 480-486.doi:10.7498/aps.56.480 |
[7] |
Zhu Hong-Xi, Mao Wei-Min, Feng Hui-Ping, Lü Fan-Xiu, Vlasov I. I., Ralchenko V. G., Khomich A. V..Atomic mechanism of twin formation in CVD diamond films. Acta Physica Sinica, 2007, 56(7): 4049-4055.doi:10.7498/aps.56.4049 |
[8] |
Wang Jing, Liu Gui-Chang, Ji Da-Peng, Xu Jun, Deng Xin-Lu.Diamond-like carbon (DLC) films deposited on copper substrate through preparation of intermediate layers. Acta Physica Sinica, 2006, 55(7): 3748-3755.doi:10.7498/aps.55.3748 |
[9] |
Hu Xiao-Jun, Li Rong-Bin, Shen He-Sheng, He Xian-Chang, Deng Wen, Luo Li-Xiong.Investigation of defect properties in doped diamond films. Acta Physica Sinica, 2004, 53(6): 2014-2018.doi:10.7498/aps.53.2014 |
[10] |
Wang Jian-Ping, Hao Yue, Peng Jun, Zhu Zuo-Yun, Zhang Yong-Hua.. Acta Physica Sinica, 2002, 51(8): 1793-1797.doi:10.7498/aps.51.1793 |
[11] |
Mei Xian-Xiu, Xu Jun, Ma Teng-Cai.. Acta Physica Sinica, 2002, 51(8): 1875-1880.doi:10.7498/aps.51.1875 |
[12] |
Qiu Dong-Jiang, Shi Cheng-Ru, Wu Hui-Zhen.. Acta Physica Sinica, 2002, 51(8): 1870-1874.doi:10.7498/aps.51.1870 |
[13] |
LI CAN-HUA, LIAO YUAN, CHANG CHAO, WANG GUAN-ZHONG, FANG RONG-CHUAN.THE NUCLEATION AND GROWTH OF (100) TEXTURED DIAMOND FILMS IN PRESENCE OF NITROG EN. Acta Physica Sinica, 2000, 49(9): 1756-1763.doi:10.7498/aps.49.1756 |
[14] |
He Xian-Chang, Shen He-Sheng, Zhang Zhi-Ming, Wan Yong-Zhong, Shen Ting.. Acta Physica Sinica, 2000, 49(3): 532-537.doi:10.7498/aps.49.532 |
[15] |
KANG JIAN, XIAO CHANG-YONG, XIONG YAN-YUN, FENG KE-AN, LIN ZHANG-DA.THE EFFECT OF ATOMIC OF HYDROGEN IN THE INITIAL PROCEDURE OF DIAMOND HETEROEPITAXY ON Si AND THE INTERFACE BETWEEN DIAMOND AND Si. Acta Physica Sinica, 1999, 48(11): 2104-2109.doi:10.7498/aps.48.2104 |
[16] |
HAN SI-JIN, CHEN JIN-SONG, FANG RONG-CHUAN, SHANG NAI-GUI, SHAO QIN-YI, LE DE-FEN, LIAO YUAN, YE ZHI-YUAN, YI BO, CUI JING-BIAO.DIAMOND FILMS GROWTH ON POLYCRYSTALLINE Cu AND PHOSPHORUS DEOXIDIZED Cu. Acta Physica Sinica, 1998, 47(4): 686-691.doi:10.7498/aps.47.686 |
[17] |
GU CHANG-ZHI, JIN ZENG-SUN, Lü XIAN-YI, ZOU GUANG-TIAN, ZHANG JI-FA, FANG RONG-CHUAN.STUDY OF THE DIAMOND FILMS WITH HIGH THERMAL CONDUCTIVITY. Acta Physica Sinica, 1997, 46(10): 1984-1989.doi:10.7498/aps.46.1984 |
[18] |
MO YAO-WU, XIA YI-BEN, HUANG XIAO-QIN, JU JIAN-HUA, WANG HONG.RAMAN SPECTRO-ANALYSES OF DIAMOND-FILMS DEPOSITED ON ALUMINA CERAMICS. Acta Physica Sinica, 1997, 46(3): 618-624.doi:10.7498/aps.46.618 |
[19] |
ZHANG WEN-JUN, HAN LI, HU BO, ZHANG FANG-QING, CHEN GUANG-HUA.NUCLEATION AND GROWTH PROCESS OF TEXTURED DIAMOND FILMS. Acta Physica Sinica, 1996, 45(1): 88-93.doi:10.7498/aps.45.88 |
[20] |
Pan Bi-Cai, Xia Shang-Da, Fang Rong-Chuan.. Acta Physica Sinica, 1995, 44(5): 763-771.doi:10.7498/aps.44.763 |