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Zhang Jian-Wei, Niu Ying, Yan Run-Qi, Zhang Rong-Qi, Cao Meng, Li Yong-Dong, Liu Chun-Liang, Zhang Jia-Wei.Analysis of effect of bulk vacancy defect on secondary electron emission characteristics of Al2O3. Acta Physica Sinica, 2024, 73(15): 157902.doi:10.7498/aps.73.20240577 |
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Li Lin, Sun Yu-Xuan, Sun Wei-Feng.First-principles study of electronic structure, magnetic and optical properties of laminated molybdenum oxides. Acta Physica Sinica, 2019, 68(5): 057101.doi:10.7498/aps.68.20181962 |
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Song Qing-Gong, Wang Li-Jie, Zhu Yan-Xia, Kang Jian-Hai, Gu Wei-Feng, Wang Ming-Chao, Liu Zhi-Feng.Effects of Si and Y co-doping on stability and oxidation resistance ofγ-TiAl based alloys. Acta Physica Sinica, 2019, 68(19): 196101.doi:10.7498/aps.68.20190490 |
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Dong Shan, Zhang Yan-Xing, Zhang Xi-Lin, Xu Xiao-Pei, Mao Jian-Jun, Li Dong-Lin, Chen Zhi-Ming, Ma Kuan, Fan Zheng-Quan, Wei Dan-Dan, Yang Zong-Xian.The first-principles study on the interaction of Ni with the yttria-stabilized zirconia and the activity of the interface. Acta Physica Sinica, 2016, 65(6): 068201.doi:10.7498/aps.65.068201 |
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Fan Hang, Wang Shan-Shan, Li Yu-Hong.Study on the electronic structure and elastic constants of uranium dioxide by first principles. Acta Physica Sinica, 2015, 64(9): 097101.doi:10.7498/aps.64.097101 |
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Gao Ya-Na, Li Xi-Feng, Zhang Jian-Hua.Solution-processed high performance HIZO thin film transistor with AZO gate dielectric. Acta Physica Sinica, 2014, 63(11): 118502.doi:10.7498/aps.63.118502 |
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Ling Zhi-Gang, Tang Yan-Lin, Li Tao, Li Yu-Peng, Wei Xiao-Nan.Molecular structure and properties of zirconiumdioxide under the external electric field. Acta Physica Sinica, 2014, 63(2): 023102.doi:10.7498/aps.63.023102 |
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Wu Jun-Bo, Tang Xin-Gui, Jia Zhen-Hua, Chen Dong-Ge, Jiang Yan-Ping, Liu Qiu-Xiang.Influences of Y- and La-dopant on the thermal conductive properties and dielectric relaxation of Al2O3-based ceramics. Acta Physica Sinica, 2012, 61(20): 207702.doi:10.7498/aps.61.207702 |
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Hu Yong-Gang, Xia Feng, Xiao Jian-Zhong, Lei Chao, Li Xiang-Dong.Microstructure evolution model of zirconia solid electrolyte based on AC impedance model analysis. Acta Physica Sinica, 2012, 61(9): 098102.doi:10.7498/aps.61.098102 |
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Tang Xin, Zhang Qing-Yu, Lü Hai-Feng, Pu Chun-Ying.First-principles study on the electronic structures and structural stability of Cd-doped ZnO. Acta Physica Sinica, 2011, 60(3): 037101.doi:10.7498/aps.60.037101 |
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Huang Yi-Hua, Jiang Dong-Liang, Zhang Jing-Xian, Lin Qing-Ling.Spectroscopic properties and Judd-Ofelt theory analysis of La, Nd codoped Y2O3 high refractivity transparent ceramics. Acta Physica Sinica, 2010, 59(1): 300-306.doi:10.7498/aps.59.300 |
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Hou Hai-Hong, Sun Xi-Lian, Shen Yan-Ming, Shao Jian-Da, Fan Zheng-Xiu, Yi Kui.Roughness and light scattering properties of ZrO2 thin films deposited by electron beam evaporation. Acta Physica Sinica, 2006, 55(6): 3124-3127.doi:10.7498/aps.55.3124 |
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Liu Huang-Qing, Wang Ling-Ling, Qin Wei-Ping.Luminescence of Eu3+ Ions in nanocrystalline zirconia. Acta Physica Sinica, 2004, 53(1): 282-285.doi:10.7498/aps.53.282 |
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GUOXIN.A GRAIN-BOUNDARY CONDUCTION MODEL FOR STABILIZED-ZIRCONIA. Acta Physica Sinica, 1998, 47(8): 1332-1338.doi:10.7498/aps.47.1332 |
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CHENG GUANG-XU, ZHANG XING-KUI.VARYING TEMPERATURE RAMAN SCATTERING STUDIES OF 12 mol% Ce TETRAGONAL ZIRCONIA POLYCRYSTAL. Acta Physica Sinica, 1990, 39(8): 162-168.doi:10.7498/aps.39.162 |
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HU WEI-MIN, MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅳ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN GaAs AND GaP. Acta Physica Sinica, 1987, 36(10): 1330-1335.doi:10.7498/aps.36.1330 |
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ZHU HUI-LONG, HUANG ZU-QIA.MIGRATION OF VACANCIES IN BCC METALS. Acta Physica Sinica, 1987, 36(9): 1122-1132.doi:10.7498/aps.36.1122 |
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REN SHANG-YUAN, MAO DE-QIANG, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI. Acta Physica Sinica, 1986, 35(11): 1457-1464.doi:10.7498/aps.35.1457 |
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MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL. Acta Physica Sinica, 1986, 35(6): 808-811.doi:10.7498/aps.35.808 |
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REN SHANG-YUAN, MAO DE-QIANG, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (Ⅰ)——BASIC EQUATIONS. Acta Physica Sinica, 1985, 34(4): 455-463.doi:10.7498/aps.34.455 |
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