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Wang Peng, Wang Chao, Hu Li-Li, Zhang Li-Yan.Effect of SiO2 on the Stark splitting enlargement of Yb3+ in phosphate glass. Acta Physica Sinica, 2016, 65(5): 057801.doi:10.7498/aps.65.057801 |
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Xia Hui, Yang Wei-Guo.Permeability of nano SiO2 aggregates in concentrated suspension. Acta Physica Sinica, 2016, 65(14): 144203.doi:10.7498/aps.65.144203 |
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Guo Wen-Hao, Xiao Hui, Men Chuan-Ling.Effects of protons within SiO2 solid-state electrolyte on performances of oxide electric-double-layer thin film transistor. Acta Physica Sinica, 2015, 64(7): 077302.doi:10.7498/aps.64.077302 |
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He Mei-Lin, Xu Jing-Ping, Chen Jian-Xiong, Liu Lu.Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer. Acta Physica Sinica, 2013, 62(23): 238501.doi:10.7498/aps.62.238501 |
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Cao Bo, Bao Liang-Man, Li Gong-Ping, He Shan-Hu.Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems. Acta Physica Sinica, 2006, 55(12): 6550-6555.doi:10.7498/aps.55.6550 |
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Zhu Zhen-Hua, Lei Ming-Kai.Structure and photoluminescence of Er3+-doped Al2O3 composite powders by mixing with SiO2. Acta Physica Sinica, 2006, 55(9): 4956-4961.doi:10.7498/aps.55.4956 |
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Ge Shi-Hui, Liu Chun-Ming, Kou Xiao-Ming, Jiang Li-Xian, Li Bin-Sheng, Li Cheng-Xian.Study on the structure and transport properties of discontinuous Co/SiO2 multilayers. Acta Physica Sinica, 2004, 53(10): 3555-3559.doi:10.7498/aps.53.3555 |
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Ma Zhong-Yuan, Huang Xin-Fan, Zhu Da, Li Wei, Chen Kun-Ji, Feng Duan.Photoluminescence from a-Si:H/SiO2 multilayers fabricated using in situ layer by layer plasma oxidation. Acta Physica Sinica, 2004, 53(8): 2746-2750.doi:10.7498/aps.53.2746 |
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Chen Chang-Yong, Chen Wei-De, Wang Yong-Qian, Song Shu-Fang, Xu Zhen-Jia.Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films. Acta Physica Sinica, 2003, 52(3): 736-739.doi:10.7498/aps.52.736 |
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Liu Ming, Yi Li-Xin, Teng Feng, Xu Zheng, Xu Xu-Rong.Mutual enhancement of cathodoluminescence and organic electroluminescence in SiO2/C9-PPV heterogeneous junction. Acta Physica Sinica, 2003, 52(4): 1013-1018.doi:10.7498/aps.52.1013 |
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ZHANG XIAO-QING, G.M.SESSLER, XIA ZHONG-FU, ZHANG YE-WEN.CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE. Acta Physica Sinica, 2001, 50(2): 293-298.doi:10.7498/aps.50.293 |
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ZHU KAI-GUI, SHI JIAN-ZHONG, SHAO QING-YI.RAMAN SCATTERING FROM InAs NANOCRYSTALS EMBEDDED IN SiO2 THIN FILMS. Acta Physica Sinica, 2000, 49(11): 2304-2306.doi:10.7498/aps.49.2304 |
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SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA.ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica, 2000, 49(7): 1404-1408.doi:10.7498/aps.49.1404 |
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HAN DA-XING, WANG WAN-LU, ZHANG ZHI.MECHANISM OF ELECTROLUMINESCENCE FROM a-Si:H AND STUDIES OF DEFECT ENERGY DISTRIBUTION IN INTRINSIC LAYER OF a-Si:H SOLAR CELLS BY ELECTROLUMINESCENCE SPECTRA. Acta Physica Sinica, 1999, 48(8): 1484-1490.doi:10.7498/aps.48.1484 |
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LOU ZHI-DONG, XU ZHENG, XU CHUN-XIANG, YU LEI, TENG FENG, XU XU-RONG.HIGH-FIELD ELECTRON TRANSPORT OF AMORPHOUS SiO2 AS ACCELERATING LAYER IN THE LAYERED OPTIMIZATION TFEL. Acta Physica Sinica, 1998, 47(1): 139-145.doi:10.7498/aps.47.139 |
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ZHANG YA-XIONG, LI AN-PING, CHEN KAI-MAO, ZHANG BO-RUI, SUN YUN-XI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA.ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES. Acta Physica Sinica, 1997, 46(5): 1011-1014.doi:10.7498/aps.46.1011 |
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HE ZHEN-HONG, CHEN KUN-JI, FENG DUAN.PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE. Acta Physica Sinica, 1997, 46(6): 1153-1160.doi:10.7498/aps.46.1153 |
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Shi Wang-Zhou, Yao Wei-Guo, Qi-Zhen-Zhong, He Yi-Zhen.. Acta Physica Sinica, 1995, 44(7): 1172-1176.doi:10.7498/aps.44.1172 |
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LIU ZHI-HONG, CHEN PU-SHENG, LIU BAI-YONG, CHENG YAO-ZONG.BREAKDOWN CHARACTERISTICS OF RAPID THERMAL NITRIDED SiO2 FILM OF 150? THICKNESS. Acta Physica Sinica, 1991, 40(1): 154-160.doi:10.7498/aps.40.154 |
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