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Wu Xue-Ke, Huang Wei-Qi, Dong Tai-Ge, Wang Gang, Liu Shi-Rong, Qin Chao-Jie.Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states. Acta Physica Sinica, 2016, 65(10): 104202.doi:10.7498/aps.65.104202 |
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An Ping, Guo Hao, Chen Meng, Zhao Miao-Miao, Yang Jiang-Tao, Liu Jun, Xue Chen-Yang, Tang Jun.Preparation and force-sensitive properties of carbon nanotube/polydimethylsiloxane composites films. Acta Physica Sinica, 2014, 63(23): 237306.doi:10.7498/aps.63.237306 |
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Ju Sheng-Hong, Liang Xin-Gang.Thermal rectification and phonon scattering in silicon nanofilm with triangle hole. Acta Physica Sinica, 2013, 62(2): 026101.doi:10.7498/aps.62.026101 |
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Cai Ya-Nan, Cui Can, Shen Hong-Lei, Liang Da-Yu, Li Pei-Gang, Tang Wei-Hua.Effects of thermal treatments on the formation of nanocrystalline Si embedded in Si-rich oxide films. Acta Physica Sinica, 2012, 61(15): 157804.doi:10.7498/aps.61.157804 |
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Deng Ze-Chao, Luo Qing-Shan, Chu Li-Zhi, Ding Xue-Cheng, Liang Wei-Hua, Fu Guang-Sheng, Wang Ying-Long.Comparison of nucleation energy of nanoparticles Si formation in substrate heating and subsequent thermal annealing. Acta Physica Sinica, 2010, 59(7): 4802-4807.doi:10.7498/aps.59.4802 |
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong.Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica, 2010, 59(12): 8770-8775.doi:10.7498/aps.59.8770 |
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Song Jie, Guo Yan-Qing, Wang Xiang, Ding Hong-Lin, Huang Rui.Influence of excitation frequency on the growth properties of nanocrystalline silicon films with high hydrogen dilution. Acta Physica Sinica, 2010, 59(10): 7378-7382.doi:10.7498/aps.59.7378 |
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Qiu Sheng-Hua, Chen Cheng-Zhao, Liu Cui-Qing, Wu Yuan-Dan, Li Ping, Lin Xuan-Ying, Huang Chong, Yu Chu-Ying.Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth. Acta Physica Sinica, 2009, 58(1): 565-569.doi:10.7498/aps.58.565 |
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Xia Zheng-Yue, Han Pei-Gao, Wei De-Yuan, Chen De-Yuan, Xu Jun, Ma Zhong-Yuan, Huang Xin-Fan, Chen Kun-Ji.Characteristics of luminescent nc-Si/SiO2 multilayers and the influence of annealing in hydrogen. Acta Physica Sinica, 2007, 56(11): 6691-6694.doi:10.7498/aps.56.6691 |
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Wang Bao-Yi, Zhang Ren-Gang, Zhang Hui, Wan Dong-Yun, Wei Long.Influence of annealing conditions of ZnO films on the properties of ZnS films pr epared by sulfurizing ZnO films. Acta Physica Sinica, 2005, 54(4): 1874-1878.doi:10.7498/aps.54.1874 |
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Wang Hai-Yan, Li Xin-Jian.Capacitive humidity-sensing properties of Si-NPA and Fe3O4/Si-NPA. Acta Physica Sinica, 2005, 54(5): 2220-2225.doi:10.7498/aps.54.2220 |
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XU GANG-YI, WANG TIAN-MIN, HE YU-LIANG, MA ZHI-XUN, ZHENG GUO-ZHEN.THE TRANSPORT MECHANISM IN NANOCRYSTALLINE SILICON FILMS AT LOW TEMPERATURE. Acta Physica Sinica, 2000, 49(9): 1798-1803.doi:10.7498/aps.49.1798 |
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LIU MING, WANG ZI-OU, XI ZHONG-HE, HE YU-LIANG.FABRICATION AND STUDY OF PHOSPHOR DOPED HYDROGENATED NANO-CRYSTALLINE SILICON FILM. Acta Physica Sinica, 2000, 49(5): 983-988.doi:10.7498/aps.49.983 |
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LIU MING, HE YU-LIANG, JIANG XING-LIU, LI GUO-HUA, HAN HE-XIANG.PHOTOLUMINESCENCE STUDY ON HYDROGENATED NANO-CRYSTALLINE SILICON FILM. Acta Physica Sinica, 1998, 47(5): 864-870.doi:10.7498/aps.47.864 |
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TONG SONG, LIU XIANG-NA, WANG LU-CHUN, YAN FENG, BAO XI-MAO.VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 1997, 46(6): 1217-1222.doi:10.7498/aps.46.1217 |
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HE YU-LIANG, YU MING-BIN, HU GEN-YOU, ZHANG QIANG.ON THE CONDUCTION MECHANISM OF HYDROGENATED NANOCRYSTALLINE SILICON FILMS. Acta Physica Sinica, 1997, 46(8): 1636-1644.doi:10.7498/aps.46.1636 |
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LIU XIANG-NA, HE YU-LIANG, F. WANG, R. SCHWARZ.A STUDY OF OPTICAL ABSORPTION SPECTRA OF NANO-CRYSTALLINE SILICON FILMS. Acta Physica Sinica, 1993, 42(12): 1979-1984.doi:10.7498/aps.42.1979 |
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GUO SHU-WEN, TAN SONG-SHENG, WANG WEI-YUAN.PIEZORESISTIVE PROPERTIES OF BORON-DOPED PECVD μc-Si FILMS. Acta Physica Sinica, 1988, 37(11): 1794-1799.doi:10.7498/aps.37.1794 |
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