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Fang Jia, Li Shuang-Liang, Xu Sheng-Zhi, Wei Chang-Chun, Zhao Ying, Zhang Xiao-Dan.Analysis on steady plasma process of high-rate microcrystalline silicon by optical emission spectroscopy. Acta Physica Sinica, 2013, 62(16): 168103.doi:10.7498/aps.62.168103 |
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Li Tian-Wei, Liu Feng-Zhen, Zhu Mei-Fang.rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film. Acta Physica Sinica, 2011, 60(1): 018103.doi:10.7498/aps.60.018103 |
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Cao Yi-Jie, Ren Bao-Xing, Chen Yu-Hong.First-principles study on the catalytic role of Ti in the hydrogenation of Al(110) surfaces. Acta Physica Sinica, 2010, 59(11): 8015-8020.doi:10.7498/aps.59.8015 |
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Liu Xiao-Juan, Liu Yi-Man, Zhou Bing-Ju.Entanglement and preparation for an atom interacting with two-mode coherent strong field via intensity-dependent coupling multiphoton processes. Acta Physica Sinica, 2010, 59(12): 8518-8525.doi:10.7498/aps.59.8518 |
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Liu Hui-Ping, Chen Xi-Meng, Liu Zhao-Yuan, Gao Zhi-Min, Liu Yu-Wen, Du Juan, Zhang Hong-Qiang, Sun Guang-Zhi, Wang Jun, Xi Fa-Yuan, Wang Yuan.Measurement of single-electron transfer cross sections in collision of C3+ with neon at intermediate velocity. Acta Physica Sinica, 2008, 57(8): 4846-4850.doi:10.7498/aps.57.4846 |
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Zhou Li-Xia, Yan You-Guo.Polarization effect and post-collisional interaction in (e, 2e) reaction process for He and Ar in coplanar asymmetric geometry. Acta Physica Sinica, 2008, 57(12): 7619-7622.doi:10.7498/aps.57.7619 |
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Liu Hui-Ping, Chen Xi-Meng, Liu Zhao-Yuan, Ding Bao-Wei, Shao Jian-Xiong, Cui Ying, Lu Yan-Xia, Gao Zhi-Min, Liu Yu-Wen, Du Juan, Sun Guang-Zhi, Xi Fa-Yuan, Wang Xing-An, Lou Feng-Jun.Measurement of single-electron transfer cross sections in collisions of C3+ with He, Ne, Ar atoms at low to intermediate velocity. Acta Physica Sinica, 2008, 57(12): 7606-7611.doi:10.7498/aps.57.7606 |
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Sang Cui-Cui, Wan Jian-Jie, Dong Chen-Zhong, Ding Xiao-Bin, Jiang Jun.Relaxation effect in photoionization processes of lithium. Acta Physica Sinica, 2008, 57(4): 2152-2160.doi:10.7498/aps.57.2152 |
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Hou Guo-Fu, Xue Jun-Ming, Sun Jian, Guo Qun-Chao, Zhang De-Kun, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua, Li Yi-Gang.Research on silane depletion status during the deposition of silicon thin films by high-pressure PECVD. Acta Physica Sinica, 2007, 56(2): 1177-1181.doi:10.7498/aps.56.1177 |
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Qian Yan, Ma Ai-Qun, Ma Zhi-Min, Liu Zheng-Jun, Liu Shu-Tian.Properties of the phase evolution of two coupled atoms Raman interacting with squeezed vacuum field. Acta Physica Sinica, 2007, 56(8): 4571-4577.doi:10.7498/aps.56.4571 |
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Huang Chun-Jia, He Hui-Yong, Zhou Ming, Fang Jia-Yuan, Huang Zu-Hong.Entropy evolution of field interacting with two entangled-atoms. Acta Physica Sinica, 2006, 55(4): 1764-1768.doi:10.7498/aps.55.1764 |
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Lai Zhen-Jiang, Yang Zhi-Yong, Bai Jin-Tao, Sun Zhong-Yu.Entanglement swapping in the process of two-level atoms interacting with cavity fields of coherent states*. Acta Physica Sinica, 2004, 53(11): 3733-3738.doi:10.7498/aps.53.3733 |
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Huang Yan-Xia, Zhao Peng-Yi, Huang Xi, Zhan Ming-Sheng.Entanglement and disentanglement in the nonlinear interaction between squeezing vacuum state field and atom. Acta Physica Sinica, 2004, 53(1): 75-81.doi:10.7498/aps.53.75 |
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Jiang Le, Yang De-Ｒen, Yu Ｘue-Ｇong, Ma Xiang-Yang, Xu Jin, Que Duan-Lin.Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-te mperature annealing. Acta Physica Sinica, 2003, 52(8): 2000-2004.doi:10.7498/aps.52.2000 |
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HUANG CHUN-JIA, LI JIANG-FAN, HE HUI-YONG.QUANTUM PROPERTIES OF LIGHT OF SQUEEZED VACUUM FIELD RAMAN INTERACTING WITH TWO COUPLED ATOMS. Acta Physica Sinica, 2001, 50(3): 473-477.doi:10.7498/aps.50.473 |
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FU XIAO-NAN, LI XIN-JIAN, JIA YU, YAO QIAN-KAI, ZENG FAN-GUANG, CHEN QIAN-WANG, ZHANG YU-HENG.SIZE-SEPARATION EFFECT OF BLUE-EMITTING POROUS SILICON IN RTO PROCESS. Acta Physica Sinica, 2000, 49(6): 1180-1184.doi:10.7498/aps.49.1180 |
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HE YU-LIANG, ZHOU HENG-NAN, LIU XIANG-NA, CHENG GUANG-XU, YU SHI-DONG.STUDIES AND ANALYSIS FOR MICROSTRUCTURES OF MICRO-CRYSTALLIZATION PROCESS OF AMORPHOUS SILICON FILMS. Acta Physica Sinica, 1990, 39(11): 1796-1802.doi:10.7498/aps.39.1796 |
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Xü YING-FAN, SUN GUO-XIAN, CHEN HONG, WANG WEN-KUI.RESEARCH OF UNDERCOOLING AND FORMATION OF BULK METALLIC GLASS OF Pd-Ni-P SYSTEM IN A CONTAINERLESS PROCESSING. Acta Physica Sinica, 1990, 39(5): 836-842.doi:10.7498/aps.39.836 |
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XIA RI-YUAN.IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica, 1980, 29(5): 566-576.doi:10.7498/aps.29.566 |
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WANG C. K., HUANG Y. S., KE T. S..INTERACTION OF SOLUTE ATOMS WITH DISLOCATIONS IN ALUMINIUM-MAGNESIUM ALLOYS UNDER FATIGUE LOADING. Acta Physica Sinica, 1965, 21(6): 1253-1263.doi:10.7498/aps.21.1253 |
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