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Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming.Band structure model of modified Ge for optical device application. Acta Physica Sinica, 2018, 67(19): 198502.doi:10.7498/aps.67.20181155 |
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Qi Jia-Hong, Hu Jian-Min, Sheng Yan-Hui, Wu Yi-Yong, Xu Jian-Wen, Wang Yue-Yuan, YANG Xiao-Ming, Zhang Zi-Rui, Zhou Yang.Carrier transport mechanism of GaAs/Ge solar cells under electrons irradiation. Acta Physica Sinica, 2015, 64(10): 108802.doi:10.7498/aps.64.108802 |
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Yue Long, Wu Yi-Yong, Zhang Yan-Qing, Hu Jian-Min, Sun Cheng-Yue, Hao Ming-Ming, Lan Mu-Jie.Effect of irradiation damage on the dark electric properties of single junction GaAs/Ge solar cells. Acta Physica Sinica, 2014, 63(18): 188101.doi:10.7498/aps.63.188101 |
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Lan Mu-Jie, Wu Yi-Yong, Hu Jian-Min, He Shi-Yu, Yue Long, Xiao Jing-Dong, Yang De-Zhuang, Zhang Zhong-Wei, Wang Xun-Chun, Qian Yong, Chen Ming-Bo.Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose. Acta Physica Sinica, 2011, 60(9): 098110.doi:10.7498/aps.60.098110 |
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Zhao Hui-Jie, He Shi-Yu, Sun Yan-Zheng, Sun Qiang, Xiao Zhi-Bin, Lü Wei, Huang Cai-Yong, Xiao Jing-Dong, Wu Yi-Yong.Effect of 100 keV proton irradiation on photoemission of GaAs/Ge space solar cells. Acta Physica Sinica, 2009, 58(1): 404-410.doi:10.7498/aps.58.404 |
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Hu Jian-Min, Wu Yi-Yong, Qian Yong, Yang De-Zhuang, He Shi-Yu.Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell. Acta Physica Sinica, 2009, 58(7): 5051-5056.doi:10.7498/aps.58.5051 |
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Song Ying-Xin, Zheng Wei-Min, Liu Jing, Chu Ning-Ning, Li Su-Mei.Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells. Acta Physica Sinica, 2009, 58(9): 6471-6476.doi:10.7498/aps.58.6471 |
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LI GUO-HUI, ZHOU SHI-PING, XU DE-MING.RESEARCH ON THE DYNAMICAL BEHAVIORS OF GaAs/AlGaAs HETEROSTRUCTURES. Acta Physica Sinica, 2001, 50(8): 1567-1573.doi:10.7498/aps.50.1567 |
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CHEN ZHANG-HAI, HU CAN-MING, LIU PU-LIN, SHI GUO-LIANG, SHEN XUE-CHU.RESONANT SUBBAND-LANDAU-LEVEL COUPLING FOR HIGH-LYING SUBBANDS OF TWO-DIMENSIONAL ELECTRON GASES IN GaAs/AlGaAs HETEROJUNCTION. Acta Physica Sinica, 1998, 47(3): 494-501.doi:10.7498/aps.47.494 |
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BAN DA-YAN, FANG RONG-CHUAN, YANG FENG-YUAN, XU SHI-HONG, XU PENG-SHOU, YUAN SHI-XIN.VALENCE BAND OFFSETS OF Ge/ZnSe(100) STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION. Acta Physica Sinica, 1997, 46(3): 587-595.doi:10.7498/aps.46.587 |
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HAN HE-XIANG, WANG ZHAO-PING, LI GUO-HUA, JIANG DE-SHENG, K. PLOOG.NEAR RESONANT RAMAN SCATTERING FROM GaAs/AlAs SUPERLATTICES. Acta Physica Sinica, 1992, 41(4): 661-667.doi:10.7498/aps.41.661 |
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ZHANG YONG, ZHENG JIAN-SHENG, WU BO-XI.THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx. Acta Physica Sinica, 1991, 40(8): 1329-1338.doi:10.7498/aps.40.1329 |
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WANG REN-ZHI, HUANG MEI-CHUN.ON THE CORRESPONDENCE OF BAND EIGENSTATES OF (GaAs)1(AlAs)1(001) SUPERLATTICE AND Ga0.5Al0.5As ALLOY. Acta Physica Sinica, 1991, 40(6): 949-956.doi:10.7498/aps.40.949 |
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WANG REN-ZHI, HUANG MEI-CHUN.FIRST PRINCIPLE STUDY OF OPTICAL-PHONON DEFORMA-TION POTENTIALS ON Λ-AXIS FOR GaAs AND AlAs. Acta Physica Sinica, 1990, 39(2): 282-288.doi:10.7498/aps.39.282 |
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WU CHUN-WU, YIN SHI-DUAN, ZHANG JING-PING, XIAO GUANG-MING, LIU JIA-RUI, ZHU PEI-RAN.ANOMALOUS ION CHANNELING EFFECTS IN InGaAs/GaAs STRAINED HETEROJUNCTIONS. Acta Physica Sinica, 1989, 38(1): 83-90.doi:10.7498/aps.38.83 |
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GU YI-MING, HUANG MING-ZHU, WANG KE-LING.INVESTIGATION OF THE Cr2+(3d4) IN GaAs UNDER HYDROSTATIC PRESSURE AND AlAs ALLOYING. Acta Physica Sinica, 1988, 37(2): 206-213.doi:10.7498/aps.37.206 |
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SHI CHANG-XIN, XIN SHANG-HENS, WU DING-FEN.THE EFFECT OF PARALLEL CONDUCTANCE IN AlGaAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1987, 36(3): 363-367.doi:10.7498/aps.36.363 |
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Xue Fang-shi.ENERGY BAND CALCULATION FOR GaAs, GaP AND GaAsxP1-x. Acta Physica Sinica, 1986, 35(10): 1315-1321.doi:10.7498/aps.35.1315 |
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CHANG YU-WON, YU QI-HUA.THE CALCULATION OF THE ENERGY-BAND STRUCTURE OF SOME SEMICONDUCTORS WITH THE PSEUDOPOTENTIAL PERTURBATION METHOD (APPLICATION TO GaAs, GaP AND Ga[As1-xPx]ALLOY). Acta Physica Sinica, 1965, 21(6): 1162-1169.doi:10.7498/aps.21.1162 |
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