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Zhang Jian-Wei, Niu Ying, Yan Run-Qi, Zhang Rong-Qi, Cao Meng, Li Yong-Dong, Liu Chun-Liang, Zhang Jia-Wei.Analysis of effect of bulk vacancy defect on secondary electron emission characteristics of Al2O3. Acta Physica Sinica, 2024, 73(15): 157902.doi:10.7498/aps.73.20240577 |
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Zhang Yu-Jia, Lu Min-Jian, Li Yan, Wei Hao-Yun.Second harmonic scattering multipole analysis of ligand-decorated gold nanoparticles. Acta Physica Sinica, 2022, 71(17): 170301.doi:10.7498/aps.71.20220669 |
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Zhang Xiao-Li, Wang Qing-Wei, Yao Wen-Xiu, Shi Shao-Ping, Zheng Li-Ang, Tian Long, Wang Ya-Jun, Chen Li-Rong, Li Wei, Zheng Yao-Hui.Influence of thermal lens effect on second harmonic process in semi-monolithic cavity scheme. Acta Physica Sinica, 2022, 71(18): 184203.doi:10.7498/aps.71.20220575 |
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Wang Si-Qiang, Ji Shun-Ying.Mixing characteristics of ellipsoidal granular materials in horizontal rotating drum based on analysis by discrete element method. Acta Physica Sinica, 2019, 68(23): 234501.doi:10.7498/aps.68.20191071 |
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Li Ming-Liang, Deng Ming-Xi, Gao Guang-Jian.Influences of the interfacial properties on second-harmonic generation by primary circumferential ultrasonic guided wave propagation in composite tube. Acta Physica Sinica, 2016, 65(19): 194301.doi:10.7498/aps.65.194301 |
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Huang Li-Jing, Ren Nai-Fei, Li Bao-Jia, Zhou Ming.Effects of laser irradiation on the photoelectric properties of thermal-annealed metal/fluorine-doped tin oxide transparent conductive films. Acta Physica Sinica, 2015, 64(3): 034211.doi:10.7498/aps.64.034211 |
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Xu Da-Qing, Zhang Yi-Men, Lou Yong-Le, Tong Jun.Influences of post-heat treatment on microstructures, optical and magnetic properties of unintentionally doped GaN epilayers implanted with Mn ions. Acta Physica Sinica, 2014, 63(4): 047501.doi:10.7498/aps.63.047501 |
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong.Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica, 2010, 59(12): 8770-8775.doi:10.7498/aps.59.8770 |
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Zhou Cheng, Gao Yan-Xia, Wang Pei-Ji, Zhang Zhong, Li Ping.Theoretical analysis of second-harmonic conversion efficiency in negative-index materials. Acta Physica Sinica, 2009, 58(2): 914-918.doi:10.7498/aps.58.914 |
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Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Mai Yao-Hua, Gao Yan-Tao, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen.Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon. Acta Physica Sinica, 2005, 54(4): 1895-1898.doi:10.7498/aps.54.1895 |
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Lin Xuan-Ying, Huang Chuang-Jun, Lin Kui-Xun, Yu Yun-Peng, Yu Chu-Ying, Huang Rui.Raman analysis of microstructure of polycrystalline silicon films deposited at low-temperatures from SiCl4-H2. Acta Physica Sinica, 2004, 53(5): 1558-1561.doi:10.7498/aps.53.1558 |
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Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Ｑin.Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica, 2003, 52(11): 2934-2938.doi:10.7498/aps.52.2934 |
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ZHANG HAO-XIANG, LU HUAN-MING, YE ZHI-ZHEN, ZHAO BING-HUI, WANG LEI, QUE DUAN-LIN.SECONDARY ION MASS SPECTROSCOPY AND PHOTOLUMINESCENCE INVESTIGATIONS ON THE GaN EPILAYER GROWN ON Si SUBSTRATE. Acta Physica Sinica, 1999, 48(7): 1315-1319.doi:10.7498/aps.48.1315 |
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ZHANG TING-QING, LIU JIA-LU, LI JIAN-JUN, WANG JIAN-PING, ZHANG ZHENG-XUAN, XU NA-JUN, ZHAO YUAN-FU, HU YU-HONG.EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFET. Acta Physica Sinica, 1999, 48(12): 2299-2303.doi:10.7498/aps.48.2299 |
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ZHANG TING-QING, LI JIAN-JUN, LIU JIA-LU, ZHAO YUAN-FU.ANALYSIS AND SIMULATION OF FLUORINE MIGRATION CHARACTERISTICS OF BF+2-IMPLANTED INTO POLYCRYSTALLINE SILICON GATE. Acta Physica Sinica, 1998, 47(4): 645-651.doi:10.7498/aps.47.645 |
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TIAN REN-HE, LU WU-XING, LI ZHU-HUAI, GAO YU-ZUN.A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb. Acta Physica Sinica, 1992, 41(5): 809-813.doi:10.7498/aps.41.809 |
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LI SHU-CHEN, CHEN MENG-ZHE, KE JUN.AN ENERGY ANALYSIS OF SECONDARY RECRYSTALLIZA-TION IN GRAIN-ORIENTED 3%Si STEEL. Acta Physica Sinica, 1990, 39(4): 672-676.doi:10.7498/aps.39.672 |
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LU WU-XING, QIAN YA-HONG, TIAN REN-HE, WANG ZHONG-LIE.SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONS. Acta Physica Sinica, 1990, 39(2): 254-260.doi:10.7498/aps.39.254 |
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LI YUAN-HENG.DYNAMIC REFLECTION PROPERTY OF ION-IMPLANTED Si BY CW CO2 LASER ANNEALING. Acta Physica Sinica, 1981, 30(4): 542-544.doi:10.7498/aps.30.542 |
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XIMEN JI-YE.THE ION OPTICAL PROPERTIES AND SECOND ORDER ABERRATION OF THE CROSSED TOROIDAL ELECTRIC AND INHOMOGENEOUS MAGNETIC FIELDS AS A MASS SPECTROMETER. Acta Physica Sinica, 1980, 29(3): 330-340.doi:10.7498/aps.29.330 |
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