| [1] |
Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian.Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(20): 207301.doi:10.7498/aps.69.20200714 |
| [2] |
Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou.Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor. Acta Physica Sinica, 2019, 68(24): 247203.doi:10.7498/aps.68.20191153 |
| [3] |
Wang Kai, Xing Yan-Hui, Han Jun, Zhao Kang-Kang, Guo Li-Jian, Yu Bao-Ning, Deng Xu-Guang, Fan Ya-Ming, Zhang Bao-Shun.Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices. Acta Physica Sinica, 2016, 65(1): 016802.doi:10.7498/aps.65.016802 |
| [4] |
An Xia, Huang Ru, Li Zhi-Qiang, Yun Quan-Xin, Lin Meng, Guo Yue, Liu Peng-Qiang, Li Ming, Zhang Xing.Research progress of high mobility germanium based metal oxide semiconductor devices. Acta Physica Sinica, 2015, 64(20): 208501.doi:10.7498/aps.64.208501 |
| [5] |
Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi.Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2014, 63(4): 047202.doi:10.7498/aps.63.047202 |
| [6] |
Dong Hai-Ming.Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica, 2013, 62(20): 206101.doi:10.7498/aps.62.206101 |
| [7] |
Ren Jian, Yan Da-Wei, Gu Xiao-Feng.Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2013, 62(15): 157202.doi:10.7498/aps.62.157202 |
| [8] |
Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng.Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301.doi:10.7498/aps.61.207301 |
| [9] |
Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei.Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification. Acta Physica Sinica, 2012, 61(22): 228502.doi:10.7498/aps.61.228502 |
| [10] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
| [11] |
Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117305.doi:10.7498/aps.60.117305 |
| [12] |
Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua.Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica, 2011, 60(1): 017205.doi:10.7498/aps.60.017205 |
| [13] |
Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei.High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica, 2010, 59(10): 7333-7337.doi:10.7498/aps.59.7333 |
| [14] |
Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue.Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica, 2008, 57(7): 4487-4491.doi:10.7498/aps.57.4487 |
| [15] |
Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min.Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121.doi:10.7498/aps.56.4117 |
| [16] |
Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Zhu Bo, Cui Li-Jie, Gao Hong-Ling, Li Dong-Lin, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers. Acta Physica Sinica, 2007, 56(7): 4143-4147.doi:10.7498/aps.56.4143 |
| [17] |
LI ZHI-FENG, LU WEI, YE HONG-JUAN, YUAN XIAN-ZHANG, SHEN XUE-CHU, G.Li, S.J.Chua.OPTICAL SPECTROSCOPY STUDY ON CARRIER CONCENTRATION AND MOBILITY IN GaN. Acta Physica Sinica, 2000, 49(8): 1614-1619.doi:10.7498/aps.49.1614 |
| [18] |
JIANG CHUN-PING, GUI YONG-SHENG, ZHENG GUO-ZHEN, MA ZHI-XUN, LI BIAO, GUO SHAO-L ING, CHU JUN-HAO.STUDY ON TRANSPORT PROPERTIES OF TWO-DIMENSIONAL ELECTRON GASES IN n-Hg0.80 Mg0.20Te INTERFACE ACCUMULATION LAYER. Acta Physica Sinica, 2000, 49(9): 1804-1808.doi:10.7498/aps.49.1804 |
| [19] |
LOU ZHI-DONG, XU ZHENG, XU CHUN-XIANG, YU LEI, TENG FENG, XU XU-RONG.HIGH-FIELD ELECTRON TRANSPORT OF AMORPHOUS SiO2 AS ACCELERATING LAYER IN THE LAYERED OPTIMIZATION TFEL. Acta Physica Sinica, 1998, 47(1): 139-145.doi:10.7498/aps.47.139 |
| [20] |
LIU KUN, CHU JUN-HAO, LI BIAO, TANG DING-YUAN.GROUND STATE ENERGY OF THE ELECTRON SUBBAND IN p-TYPE HgCdTe INVERSION LAYER. Acta Physica Sinica, 1994, 43(2): 267-273.doi:10.7498/aps.43.267 |
下载: