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Zhu Wei-Jun, Chen Jin-Xin, Gao Yu-Han, Yang De-Ren, Ma Xiang-Yang.Electroluminescence from silicon-based light-emitting device with erbium-doped TiO2films: Enhancement effect of ytterbium codoping. Acta Physica Sinica, 2019, 68(12): 124204.doi:10.7498/aps.68.20190300 |
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Fan Zhi-Dong, Zhou Zi-Chun, Liu Chuo, Ma Lei, Peng Ying-Cai.Photoluminescence properties of Eu doped Si nanowires. Acta Physica Sinica, 2015, 64(14): 148103.doi:10.7498/aps.64.148103 |
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Wang Jian, Xie Zi-Li, Zhang Rong, Zhang Yun, Liu Bin, Chen Peng, Han Ping.Study on the photoluminescence properties of InN films. Acta Physica Sinica, 2013, 62(11): 117802.doi:10.7498/aps.62.117802 |
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Deng Quan, Ma Yong, Yang Xiao-Hong, Ye Li-Juan, Zhang Xue-Zhong, Zhang Qi, Fu Hong-Wei.Photoluminescence and Raman properties of Sb-doped ZnO thin film. Acta Physica Sinica, 2012, 61(24): 247701.doi:10.7498/aps.61.247701 |
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Fang Qing-Qing, Wang Wei-Na, Zhou Jun, Wang Sheng-Nan, Yan Fang-Liang, Liu Yan-Mei, Li Yan, Lü Qing-Rong.Photoluminescence characteristics of Zn1-xMgxO films. Acta Physica Sinica, 2009, 58(8): 5836-5841.doi:10.7498/aps.58.5836 |
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Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong.Preparation of SiOx nanowires in different atmosphere, their morphology, PL and FTIR properties. Acta Physica Sinica, 2009, 58(4): 2306-2312.doi:10.7498/aps.58.2306 |
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Tang Bin, Deng Hong, Shui Zheng-Wei, Wei Min, Chen Jin-Ju, Hao Xin.Room-temperature optical properties of Al-doped ZnO nanowires array. Acta Physica Sinica, 2007, 56(9): 5176-5179.doi:10.7498/aps.56.5176 |
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Yuan Yan-Hong, Hou Xun, Gao Heng.Effect of ultrasonic treatment on ZnO film photoluminescence. Acta Physica Sinica, 2006, 55(1): 446-449.doi:10.7498/aps.55.446 |
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Wen Lei, Zhang Li-Yan, Yang Jian-Hu, Wang Guo-Nian, Chen Wei, Hu Li- Li.Upconversion emission properties of Er3+ in fluoride (halide) phosphate tellurite glasses. Acta Physica Sinica, 2006, 55(3): 1486-1490.doi:10.7498/aps.55.1486 |
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Li Shan-Feng, Zhang Qing-Yu.Absorption and photoluminescence properties Er/Yb co-doped soda-silicate glasses. Acta Physica Sinica, 2005, 54(11): 5462-5467.doi:10.7498/aps.54.5462 |
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Ji Ai-Ling, Ma Li-Bo, Liu Cheng, Wang Yong-Qian.Low temperature fabrication of nanostructured Si-SiOx and Si-SiNx composite films and their photoluminescence features. Acta Physica Sinica, 2004, 53(11): 3818-3822.doi:10.7498/aps.53.3818 |
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Zhang Xi-Tian, Xiao Zhi-Yan, Zhang Wei-Li, Gao Hong, Wang Yu-Xi, Liu Yi-Chun, Zhang Ji-Ying, Xu Wu.A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films. Acta Physica Sinica, 2003, 52(3): 740-744.doi:10.7498/aps.52.740 |
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Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia.RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica, 2003, 52(10): 2558-2562.doi:10.7498/aps.52.2558 |
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XIAO ZHI-FEI, XU FEI, ZHANG TONG-HE, CHENG GUO-AN, GU LAN-LAN.. Acta Physica Sinica, 2001, 50(1): 164-168.doi:10.7498/aps.50.164 |
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LIU ZHAO-HONG, JIANG BING-XI, CHEN MOU-ZHI, LIU RUI-TANG.DYNAMICAL CHARACTERISTICS OF ELECTROLUMINES-CENCE IN ZINC SULFIDE THIN FILM DEVICES DOPED WITH ERBIUM. Acta Physica Sinica, 1999, 48(9): 1767-1772.doi:10.7498/aps.48.1767 |
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LIU MING, HE YU-LIANG, JIANG XING-LIU, LI GUO-HUA, HAN HE-XIANG.PHOTOLUMINESCENCE STUDY ON HYDROGENATED NANO-CRYSTALLINE SILICON FILM. Acta Physica Sinica, 1998, 47(5): 864-870.doi:10.7498/aps.47.864 |
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LEI HONG-BING, YANG QIN-QING, WANG QI-MING.CRYSTAL-FIELD SPLITTING OF Er3+ IN SILICON. Acta Physica Sinica, 1998, 47(7): 1201-1206.doi:10.7498/aps.47.1201 |
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MA ZHI-XUN, LIAO XIAN-BO, HE JIE, CHENG WEN-CHAO, YUE GUO-ZHEN, WANG YONG-QIAN, DIAO HONG-WEI, KONG GUANG-LIN.ANNEALING BEHAVIORS OF PHOTOLUMINESCENCE FROM SiOx∶H FILMS. Acta Physica Sinica, 1998, 47(6): 1033-1040.doi:10.7498/aps.47.1033 |
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HU KAI-SHENG, LI ZONG-XIANG, NING DING, LI HAO, ZHOU JIAN-PING, LIU QUAN-MIN.EFFECTS OF ELECTRON IRRADIATION ON LOSS CHARACTERISTICS OF SINGLE MODE OPTICAL FIBERS DOPED WITH RARE EARTH Er3+. Acta Physica Sinica, 1991, 40(4): 560-567.doi:10.7498/aps.40.560 |
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