| [1] |
Liu Huan, Li Gong-Ping, Xu Nan-Nan, Lin Qiao-Lu, Yang Lei, Wang Cang-Long.A simulation study of structural and optical properties in Cu ions implantation single-crystal rutile. Acta Physica Sinica, 2016, 65(20): 206102.doi:10.7498/aps.65.206102 |
| [2] |
Qin Xi-Feng, Ma Gui-Jie, Shi Shu-Hua, Wang Feng-Xiang, Fu Gang, Zhao Jin-Hua.Investigation on range distribution of Er ions implanted in silicon-on-insulator. Acta Physica Sinica, 2014, 63(17): 176101.doi:10.7498/aps.63.176101 |
| [3] |
Zhu He, Zhang Bing-Po, Wang Miao, Hu Gu-Jin, Dai Ning, Wu Hui-Zhen.Influence of high dose As ion implantation on electrical properties of high resistivity silicon. Acta Physica Sinica, 2014, 63(13): 136803.doi:10.7498/aps.63.136803 |
| [4] |
Wang Chong, Yang Yu, Yang Rui-Dong, Li Liang, Wei Dong, Jin Ying-Xia, Bao Ji-Ming.Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer. Acta Physica Sinica, 2011, 60(10): 106104.doi:10.7498/aps.60.106104 |
| [5] |
Wang Jun-Zhuan, Shi Zhuo-Qiong, Lou Hao-Nan, Zhang Xin-Luan, Zuo Ze-Wen, Pu Lin, Ma En, Zhang Rong, Zheng You-Liao, Lu Fang, Shi Yi.Influence of Si crystallization evolution on 1.54 μm luminescence in Er-doped Si/Al2O3 multilayer. Acta Physica Sinica, 2009, 58(6): 4243-4248.doi:10.7498/aps.58.4243 |
| [6] |
Gao Hao, Liao Long-Zhong, Zhang Zhao-Hui.Experimental investigation on formation of Al-Si clusters and nanocrystals in the segregation of ion-implanted Al on Si(100). Acta Physica Sinica, 2009, 58(1): 427-431.doi:10.7498/aps.58.427 |
| [7] |
Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
| [8] |
Liu Xue-Qin, Wang Yin-Yue, Zhen Cong-Mian, Zhang Jing, Yang Ying-Hu, Guo Yong-Ping.. Acta Physica Sinica, 2002, 51(10): 2340-2343.doi:10.7498/aps.51.2340 |
| [9] |
WANG PEI-LU, LIU ZHONG-YANG, ZHENG SI-XIAO, LIAO XIAO-DONG, YANG CHAO-WEN, TANG A-YOU, SHI MIAN-GONG, YANG BEI-FANG, MIAO JING-WEI.STUDIES ON THE FEATURE OF Si(111) SURFACE IMPLANTED BY NITROGEN ATOM,MOLECULE AND CLUSTER IONS. Acta Physica Sinica, 2001, 50(5): 860-864.doi:10.7498/aps.50.860 |
| [10] |
PENG YING-CAI, XU GANG-YI, HE YU-LIANG, LIU MING, LI YUE-XIA.CARRIER TRANSPORT PROPERTIES OF THE (n)nc-Si:H/(p)c-Si HETEROJUNCTION. Acta Physica Sinica, 2000, 49(12): 2466-2471.doi:10.7498/aps.49.2466 |
| [11] |
WANG YIN-SHU, LI JIN-MIN, JIN YUN-FAN, WANG YU-TIAN, LIN LAN-YING.THE FORMATION AND CHARACTERISTICS OF Si1-xCx ALLOYS IN Si CRYSTALS BY MEANS OF IMPLANTATION OF CIONS WITH DIFFERENT DOSES. Acta Physica Sinica, 2000, 49(11): 2210-2213.doi:10.7498/aps.49.2210 |
| [12] |
YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN.Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984.doi:10.7498/aps.47.978 |
| [13] |
Lu Wu-Xing, R.J.Schreatelkamp, J.R.Liefting, F.W.Saris.. Acta Physica Sinica, 1995, 44(7): 1101-1107.doi:10.7498/aps.44.1101 |
| [14] |
GAO SHAN-HU, ZHANG YUN, XUN KUN, ZHAO RU-GUANG, YANG WEI-SHENG.TUNABLE-SAMPLING-DEPTH ELECTRON ENERGY LOSS SPECTROSCOPY STUDIES OF Sn/Si INTERFACE. Acta Physica Sinica, 1993, 42(8): 1290-1296.doi:10.7498/aps.42.1290 |
| [15] |
LU WU-XING, QIAN YA-HONG, TIAN REN-HE, WANG ZHONG-LIE.SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONS. Acta Physica Sinica, 1990, 39(2): 254-260.doi:10.7498/aps.39.254 |
| [16] |
YU YUE-HUI, LIN CHENG-LU, ZHANG SHUN-KAI, FANG ZI-ZEI, ZOU SHI-CHANG.AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION. Acta Physica Sinica, 1989, 38(12): 1996-2002.doi:10.7498/aps.38.1996 |
| [17] |
GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA.THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156.doi:10.7498/aps.37.152 |
| [18] |
HE XING-FEI, MO DANG.MULTILAYER ANALYSIS OF DAMAGE PROFILE IN ION IMPLANTED SILICON BY OPTICAL SPECTROMETRY. Acta Physica Sinica, 1986, 35(12): 1567-1573.doi:10.7498/aps.35.1567 |
| [19] |
WANG WEI-YUAN, XIA GUAN-QUN, LU JIAN-GUO, SHAO YONG-FU, QIAO YONG.CARRIER PROFILE TAIL IN SILICON IMPLANTED Cr-DOPED SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica, 1985, 34(3): 402-407.doi:10.7498/aps.34.402 |
| [20] |
LI YUAN-HENG.DYNAMIC REFLECTION PROPERTY OF ION-IMPLANTED Si BY CW CO2 LASER ANNEALING. Acta Physica Sinica, 1981, 30(4): 542-544.doi:10.7498/aps.30.542 |
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