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Wang Hai-Ling, Wang Ting, Zhang Jian-Jun.Controllable growth of InAs quantum dots on patterned GaAs (001) substrate. Acta Physica Sinica, 2019, 68(11): 117301.doi:10.7498/aps.68.20190317 |
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Shang Xiang-Jun, Ma Ben, Chen Ze-Sheng, Yu Ying, Zha Guo-Wei, Ni Hai-Qiao, Niu Zhi-Chuan.Physics and devices of quanutm light emission from semicoductor self-assembled quantum Dots. Acta Physica Sinica, 2018, 67(22): 227801.doi:10.7498/aps.67.20180594 |
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Sun Bao-An, Wang Li-Feng, Shao Jian-Hua.Self-organized critical behavior in plastic flow of amorphous solids. Acta Physica Sinica, 2017, 66(17): 178103.doi:10.7498/aps.66.178103 |
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Peng Na-Na, Huo Yan-Yan, Zhou Kan, Jia Xin, Pan Jia, Sun Zhen-Rong, Jia Tian-Qing.The development of femtosecond laser-induced periodic nanostructures and their optical properties. Acta Physica Sinica, 2013, 62(9): 094201.doi:10.7498/aps.62.094201 |
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Yu Xu-Tao, Xu Jin, Zhang Zai-Chen.Routing protocol for wireless ad hoc quantum communication network based on quantum teleportation. Acta Physica Sinica, 2012, 61(22): 220303.doi:10.7498/aps.61.220303 |
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Zhang Xue-Gui, Wang Chong, Lu Zhi-Quan, Yang Jie, Li Liang, Yang Yu.Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering. Acta Physica Sinica, 2011, 60(9): 096101.doi:10.7498/aps.60.096101 |
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Wang Xiu-Ping, Yang Xiao-Hong, Han Qin, Ju Yan-Ling, Du Yun, Zhu Bin, Wang Jie, Ni Hai-Qiao, He Ji-Fang, Wang Guo-Wei, Niu Zhi-Chuan.Preparation and photoluminescence study of patterned substrate quantum wires. Acta Physica Sinica, 2011, 60(2): 020703.doi:10.7498/aps.60.020703 |
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Jiang Zhong-Wei, Wang Wen-Xin, Gao Han-Chao, Li Hui, He Tao, Yang Cheng-Liang, Chen Hong, Zhou Jun-Ming.Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots. Acta Physica Sinica, 2009, 58(1): 471-476.doi:10.7498/aps.58.471 |
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Huang Li-Qing, Pan Hua-Qiang, Wang Jun, Tong Hui-Min, Zhu Ke, Ren Guan-Xu, Wang Yong-Chang.Spontaneous formation of ordered Sn nanodot array on porous anodic alumina membrane. Acta Physica Sinica, 2007, 56(11): 6712-6716.doi:10.7498/aps.56.6712 |
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Dong Qing-Rui, Niu Zhi-Chuan.Excitonic energy of vertically stacked self-assmbled InAs quantum dots. Acta Physica Sinica, 2005, 54(4): 1794-1798.doi:10.7498/aps.54.1794 |
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Zhang Yong-Ju, Yu Sen-Jiang.Self-organization of ordered surface patterns in nearly free sustained Al films. Acta Physica Sinica, 2005, 54(10): 4867-4873.doi:10.7498/aps.54.4867 |
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Li Liang-Xin, Hu Yong-Hua.Intersubband and intraband transitions of self-assembled quantum wires for the infrared detectors. Acta Physica Sinica, 2005, 54(2): 848-856.doi:10.7498/aps.54.848 |
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Peng Ying-Cai, M. Ikeda, S. Miyazaki.Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition. Acta Physica Sinica, 2003, 52(12): 3108-3113.doi:10.7498/aps.52.3108 |
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Yan Long, Zhang Yong-Ping, Peng Yi-Ping, Pang Shi-Jin, Gao Hong-Jun.. Acta Physica Sinica, 2002, 51(5): 1017-1021.doi:10.7498/aps.51.1017 |
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Zhang Yong-Peng, Yan Long, Xie Si-Shen, Pang Shi-Jin, Gao Hong-Jun.. Acta Physica Sinica, 2002, 51(2): 296-299.doi:10.7498/aps.51.296 |
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WANG XIAO-DONG, LIU HUI-YUN, NIU ZHI-CHUAN, FENG SONG-LIN.STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYER. Acta Physica Sinica, 2000, 49(11): 2230-2234.doi:10.7498/aps.49.2230 |
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LV ZHEN-DONG, LI QING, XU JI-ZONG, ZHENG BAO-ZHEN, XU ZHONG-YING, GE WEI-KUN.EXCITON DYNAMICS IN SELF-ORGANIZED InAs/GaAs QUANTUM DOTS. Acta Physica Sinica, 1999, 48(4): 744-750.doi:10.7498/aps.48.744 |
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JIANG WEI-HONG, XU HUAI-ZHE, GONG QIAN, XU BO, WANG JI-ZHENG, ZHOU WEI, LIANG JI-BEN, WANG ZHAN-GUO.STRUCTURAL AND OPTICAL PROPERTIES OF SELF-ASSEMBLED InAs QUANTUM DOTS GROWN ON GaAs(311) A SUBSTRATE. Acta Physica Sinica, 1999, 48(8): 1541-1546.doi:10.7498/aps.48.1541 |
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WANG ZHI-MING, FENG SONG-LIN, Lv ZHEN-DONG, YANG XIAO-PING, CHEN ZONG-GUI, SONG CHUN-YING, XU ZHONG-YING, ZHENG HOU-ZHI, WANG FENG-LIAN, HAN PAI-DE, DUAN XIAO-FENG.STUDY OF VERTICALLY ALIGNING GROWTH OF SELF-ASSEMBLED InAs/GaAs QUANTUM DOTS. Acta Physica Sinica, 1998, 47(1): 89-93.doi:10.7498/aps.47.89 |
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