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Liu Zi-Yi, Chu Fu-Qiang, Wei Jun-Jun, Feng Yan-Hui.Interface thermal conductance and phonon thermal transport characteristics of diamond/carbon nanotube interface. Acta Physica Sinica, 2024, 73(13): 138102.doi:10.7498/aps.73.20240323 |
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Ma Meng-Yu, Yu Cui, He Ze-Zhao, Guo Jian-Chao, Liu Qing-Bin, Feng Zhi-Hong.Growth and surface structrue of hydrogen terminal diamond thin films. Acta Physica Sinica, 2024, 73(8): 088101.doi:10.7498/aps.73.20240053 |
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Geng Chuan-Wen, Xia Yu-Hao, Zhao Hong-Yang, Fu Qiu-Ming, Ma Zhi-Bin.Effect of edge inclination of single crystal diamond on homoepitaxial growth. Acta Physica Sinica, 2018, 67(24): 248101.doi:10.7498/aps.67.20181537 |
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Ai Li-Qiang, Zhang Xiang-Xiong, Chen Min, Xiong Da-Xi.Deposition and thermal conductivity of diamond-like carbon film on a silicon substrate. Acta Physica Sinica, 2016, 65(9): 096501.doi:10.7498/aps.65.096501 |
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Fang Chao, Jia Xiao-Peng, Chen Ning, Zhou Zhen-Xiang, Li Ya-Dong, Li Yong, Ma Hong-An.Crystal growth and characterization of hydrogen-doped single diamond with Fe(C5H5)2 additive. Acta Physica Sinica, 2015, 64(12): 128101.doi:10.7498/aps.64.128101 |
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Yu Cui, Li Jia, Liu Qing-Bin, Cai Shu-Jun, Feng Zhi-Hong.Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001). Acta Physica Sinica, 2014, 63(3): 038102.doi:10.7498/aps.63.038102 |
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Qiu Yun-Fei, Du Wen-Han, Wang Bing.Initial growth of SrTiO3 on Sr/Si(001) studied by scanning tunneling microscope. Acta Physica Sinica, 2011, 60(3): 036801.doi:10.7498/aps.60.036801 |
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Li Rong-Bin.Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition. Acta Physica Sinica, 2009, 58(2): 1287-1292.doi:10.7498/aps.58.1287 |
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Li Rong-Bin, Yu Zhong-Hai.Computer simulation of damage in diamond due to boron-nitrogen co-doping and its annealing. Acta Physica Sinica, 2007, 56(6): 3360-3365.doi:10.7498/aps.56.3360 |
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Liu Cun-Ye, Liu Chang.Microscopic structure studies on the diamond films fabricated by chemical vapor deposition method. Acta Physica Sinica, 2003, 52(6): 1479-1483.doi:10.7498/aps.52.1479 |
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