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Zhao Ming-Liang, Chen Song, Sun Feng, Zhang Jing, Lin Yan, Zhang Wei-Ru, Wang Wei-Guo.Grain boundary character distributions in Si3N4ceramics. Acta Physica Sinica, 2021, 70(22): 226801.doi:10.7498/aps.70.20210233 |
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Dai Yue-Hua, Jin Bo, Wang Jia-Yu, Chen Zhen, Li Ning, Jiang Xian-Wei, Lu Wen-Juan, Li Xiao-Feng.First-principles study on the minimization of over-erase phenomenon in Si3N4 trapping layer. Acta Physica Sinica, 2015, 64(13): 133102.doi:10.7498/aps.64.133102 |
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Cheng Chao-Qun, Li Gang, Zhang Wen-Dong, Li Peng-Wei, Hu Jie, Sang Sheng-Bo, Deng Xiao.Electronic structures and optical properties of boron and phosphorus doped β-Si3N4. Acta Physica Sinica, 2015, 64(6): 067102.doi:10.7498/aps.64.067102 |
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Li Wei-Cong, Zou Zhi-Qiang, Wang Dan, Shi Gao-Ming.STM study of growth of manganese silicide thin films on a Si(100)-21 surface. Acta Physica Sinica, 2012, 61(6): 066801.doi:10.7498/aps.61.066801 |
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Yu Ben-Hai, Chen Dong.First-principles study on the electronic structure and phase transition of α-, β- and γ-Si3N4. Acta Physica Sinica, 2012, 61(19): 197102.doi:10.7498/aps.61.197102 |
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Wu Xiao-Yan, Kong Ming, Li Ge-Yang, Zhao Wen-Ji.Crystallization of Si3N4 on h-AlN and superhardness effect of AlN/Si3N4 nanomultilayers. Acta Physica Sinica, 2009, 58(4): 2654-2659.doi:10.7498/aps.58.2654 |
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Yu Li-Hua, Dong Song-Tao, Dong Shi-Run, Xu Jun-Hua.Epitaxial growth and mechanical properties of AlN/Si3N4 nanostructured multilayers. Acta Physica Sinica, 2008, 57(8): 5151-5158.doi:10.7498/aps.57.5151 |
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Zhu Ying-Tao, Yang Chuan-Lu, Wang Mei-Shan, Dong Yong-Mian.First-principles calculations on the electrical structures and vibration frequencies of β-Si3N4. Acta Physica Sinica, 2008, 57(2): 1048-1053.doi:10.7498/aps.57.1048 |
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Tang Li-Dan, Zhang Yue.Preparation and characteristics of p-type ZnO by treated gaseous ammonia annealing. Acta Physica Sinica, 2008, 57(2): 1145-1149.doi:10.7498/aps.57.1145 |
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Ding Ying-Chun, Xiang An-Ping, Xu Ming, Zhu Wen-Jun.Electrical structures and optical properties of doped earth element (Y，La) in γ-Si3N4. Acta Physica Sinica, 2007, 56(10): 5996-6002.doi:10.7498/aps.56.5996 |
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Zhao Wen-Ji, Dong Yun-Shan, Yue Jian-Ling, Li Ge-Yang.Crystallization of Si3N4 and superhardness effect of ZrN/Si3N4 nano-multilayers. Acta Physica Sinica, 2007, 56(1): 459-464.doi:10.7498/aps.56.459 |
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Ding Ying-Chun, Xu Ming, Pan Hong-Zhe, Shen Yi-Bin, Zhu Wen-Jun, He Hong-Liang.Electronic structure and physical properties of γ-Si3N4 under high pressure. Acta Physica Sinica, 2007, 56(1): 117-122.doi:10.7498/aps.56.117 |
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Pan Hong-Zhe, Xu Ming, Zhu Wen-Jun, Zhou Hai-Ping.First-principles study on the electrical structures and optical properties of β-Si3N4. Acta Physica Sinica, 2006, 55(7): 3585-3589.doi:10.7498/aps.55.3585 |
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ZHANG XIAO-QING, G.M.SESSLER, XIA ZHONG-FU, ZHANG YE-WEN.CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE. Acta Physica Sinica, 2001, 50(2): 293-298.doi:10.7498/aps.50.293 |
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WANG LEI, TANG JING-CHANG, WANG XUE-SEN.SCANNING TUNNELING MICROSCOPY STUDY OF Si GROWTH ON Si3N4/Si SURFACE. Acta Physica Sinica, 2001, 50(3): 517-522.doi:10.7498/aps.50.517 |
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CHEN JUN-FANG, WU XIAN-QIU, WANG DE-QIU, DING ZHEN-FENG, REN ZHAO-XING.INVESTIGATION ON THE DEPOSITION PROCESS OF SILICON NITRIDE THIN FILM PREPARED BY ECR-PECVD. Acta Physica Sinica, 1999, 48(7): 1309-1314.doi:10.7498/aps.48.1309 |
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