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Tang Wen-Hui, Liu Bang-Wu, Zhang Bo-Cheng, Li Min, Xia Yang.Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica, 2017, 66(9): 098101.doi:10.7498/aps.66.098101 |
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Wang Jian, Chuai Rong-Yan.Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration. Acta Physica Sinica, 2017, 66(24): 247201.doi:10.7498/aps.66.247201 |
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Li Zhi-Guo, Liu Wei, He Jing-Jing, Li Zu-Liang, Han An-Jun, Zhang Chao, Zhou Zhi-Qiang, Zhang Yi, Sun Yun.Influences of deposition rate in second stage on the Cu(In,Ga)Se2 thin film and device prepared by low-temperature process. Acta Physica Sinica, 2013, 62(3): 038803.doi:10.7498/aps.62.038803 |
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Feng Jia-Heng, Tang Li-Dan, Liu Bang-Wu, Xia Yang, Wang Bing.Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica, 2013, 62(11): 117302.doi:10.7498/aps.62.117302 |
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Li Wei-Cong, Zou Zhi-Qiang, Wang Dan, Shi Gao-Ming.STM study of growth of manganese silicide thin films on a Si(100)-21 surface. Acta Physica Sinica, 2012, 61(6): 066801.doi:10.7498/aps.61.066801 |
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Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming.Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica, 2012, 61(19): 198101.doi:10.7498/aps.61.198101 |
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Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang.Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica, 2012, 61(2): 028104.doi:10.7498/aps.61.028104 |
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Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen.Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica, 2010, 59(4): 2775-2782.doi:10.7498/aps.59.2775 |
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Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen.Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica, 2009, 58(9): 6560-6565.doi:10.7498/aps.58.6560 |
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Meng Li-Jun, Zhang Kai-Wang, Zhong Jian-Xin.Molecular dynamics simulation of formation of silicon nanoparticles on surfaces of carbon nanotubes. Acta Physica Sinica, 2007, 56(2): 1009-1013.doi:10.7498/aps.56.1009 |
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Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen.The research on metal induced crystallization with chemical source. Acta Physica Sinica, 2006, 55(2): 825-829.doi:10.7498/aps.55.825 |
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong.Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica, 2006, 55(5): 2523-2528.doi:10.7498/aps.55.2523 |
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Gu Jin-Hua, Zhou Yu-Qin, Zhu Mei-Fang, Li Guo-Hua, Ding Kun, Zhou Bing-Qing, Liu Feng-Zhen, Liu Jin-Long, Zhang Qun-Fang.Study on growth mechanism of low-temperature prepared microcrystalline Si thin f ilms. Acta Physica Sinica, 2005, 54(4): 1890-1894.doi:10.7498/aps.54.1890 |
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Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying.The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica, 2005, 54(8): 3805-3809.doi:10.7498/aps.54.3805 |
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Wang Xiao-Qiang, Li Jun-Shuai, Chen Qiang, Qi Jing, Yin Min, He De-Yan.Aluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD. Acta Physica Sinica, 2005, 54(1): 269-273.doi:10.7498/aps.54.269 |
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Lin Xuan-Ying, Huang Chuang-Jun, Lin Kui-Xun, Yu Yun-Peng, Yu Chu-Ying, Huang Rui.Raman analysis of microstructure of polycrystalline silicon films deposited at low-temperatures from SiCl4-H2. Acta Physica Sinica, 2004, 53(5): 1558-1561.doi:10.7498/aps.53.1558 |
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Chen Yi-Kuang, Lin Kui-Xun, Luo Zhi, Liang Rui-Sheng, Zhou Fu-Fang.Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films. Acta Physica Sinica, 2004, 53(2): 582-586.doi:10.7498/aps.53.582 |
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Yao Ruo-He, Huang Wen-Yong, Wei Jun-Hong, Wang Zhao-Kui, Yu Chu-Ying.Control of grain size during low-temperature growth of polycrystalline silicon films. Acta Physica Sinica, 2004, 53(11): 3950-3955.doi:10.7498/aps.53.3950 |
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Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Ｑin.Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica, 2003, 52(11): 2934-2938.doi:10.7498/aps.52.2934 |
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ZHU XIAO-BIN, WANG WEI.KINETICS AND SCALING BEHAVIOR OF REACTION PERCOLATION BALLISTIC SURFACE GROWTH. Acta Physica Sinica, 1997, 46(10): 1990-1998.doi:10.7498/aps.46.1990 |
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