| [1] |
Qi Bing, Tian Xiao, Wang Jing, Wang Yi-Shan, Si Jin-Hai, Tang Jie.One-dimensional simulation of Ar dielectric barrier discharge driven by combined rf/dc sources at atmospheric pressure. Acta Physica Sinica, 2022, 71(24): 245202.doi:10.7498/aps.71.20221361 |
| [2] |
Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li.A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica, 2022, 71(19): 198501.doi:10.7498/aps.71.20220879 |
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Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong.Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica, 2021, 70(3): 037102.doi:10.7498/aps.70.20200921 |
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Lu Qi, Lyu Hong-Ming, Wu Xiao-Ming, Wu Hua-Qiang, Qian He.Research progress of graphene radio frequency devices. Acta Physica Sinica, 2017, 66(21): 218502.doi:10.7498/aps.66.218502 |
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Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei.-ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica, 2016, 65(20): 207301.doi:10.7498/aps.65.207301 |
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Zhang Yan, Dong Gang, Yang Yin-Tang, Wang Ning, Wang Feng-Juan, Liu Xiao-Xian.A novel interconnect-optimal power model considering self-heating effect. Acta Physica Sinica, 2013, 62(1): 016601.doi:10.7498/aps.62.016601 |
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin.Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica, 2012, 61(2): 027202.doi:10.7498/aps.61.027202 |
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men.Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica, 2011, 60(1): 017103.doi:10.7498/aps.60.017103 |
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Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men.Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica, 2011, 60(3): 037808.doi:10.7498/aps.60.037808 |
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Zou Xiu, Zou Bin-Yan, Liu Hui-Ping.Effect of external magnetic field on ion energy density of collisional radio-frequency sheath. Acta Physica Sinica, 2009, 58(9): 6392-6396.doi:10.7498/aps.58.6392 |
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong, Wang Yue-Hu, Chen Liang.The extraction method for trap parameters in 4H-SiC MESFETs. Acta Physica Sinica, 2008, 57(5): 2871-2874.doi:10.7498/aps.57.2871 |
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Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu.Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica, 2008, 57(10): 6649-6653.doi:10.7498/aps.57.6649 |
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Zhao Guo-Wei, Wang Zhi-Jiang, Xu Yue-Min, Liang Zhi-Wei, Xu Jie.Numerical simulation of plasma nonlinear phenomena excited by radio-frequency wave using FDTD method. Acta Physica Sinica, 2007, 56(9): 5304-5308.doi:10.7498/aps.56.5304 |
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Zou Xiu.Structure of radio-frequency flat plasma sheath in an oblique magnetic field. Acta Physica Sinica, 2006, 55(4): 1907-1913.doi:10.7498/aps.55.1907 |
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Qiu Liang, Meng Yue-Dong, Ren Zhao-Xing, Zhong Shao-Feng.A new atmospheric RF cold plasma source with microhollow cathode structure. Acta Physica Sinica, 2006, 55(11): 5872-5877.doi:10.7498/aps.55.5872 |
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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping.Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica, 2005, 54(6): 2918-2923.doi:10.7498/aps.54.2918 |
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming.The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica, 2003, 52(10): 2541-2546.doi:10.7498/aps.52.2541 |
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Zhang Hong-Tao, Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin.. Acta Physica Sinica, 2002, 51(2): 304-309.doi:10.7498/aps.51.304 |
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Xu Chang-Fa, Yang Yin-Tang, Liu Li.. Acta Physica Sinica, 2002, 51(5): 1113-1117.doi:10.7498/aps.51.1113 |
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DAI ZHONG-LING, WANG YOU-NIAN, MA TENG-CAI.DYNAMICAL MODEL OF THE RADIO-FREQUENCY PLASMA SHEATH. Acta Physica Sinica, 2001, 50(12): 2398-2402.doi:10.7498/aps.50.2398 |
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