| [1] |
Liu Yuan-Feng, Li Bin-Cheng, Zhao Bin-Xing, Liu Hong.Detection of subsurface defects in silicon carbide bulk materials with photothermal radiometry. Acta Physica Sinica, 2023, 72(2): 024208.doi:10.7498/aps.72.20221303 |
| [2] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin.First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica, 2022, 71(5): 058102.doi:10.7498/aps.71.20211796 |
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Yu Zi-Heng, Ma Chun-Hong, Bai Shao-Xian.Effect of sharp edge of ring-groove-structures in SiC surface. Acta Physica Sinica, 2021, 70(4): 044702.doi:10.7498/aps.70.20201303 |
| [4] |
Huang Yi-Hua, Jiang Dong-Liang, Zhang Hui, Chen Zhong-Ming, Huang Zheng-Ren.Ferromagnetism of Al-doped 6H-SiC and theoretical calculation. Acta Physica Sinica, 2017, 66(1): 017501.doi:10.7498/aps.66.017501 |
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Cao Qing-Song, Deng Kai-Ming.Theoretical studies of geometric and electronic structures of X@C20F20 (X=He, Ne, Ar, Kr). Acta Physica Sinica, 2016, 65(5): 056102.doi:10.7498/aps.65.056102 |
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Lu Wu-Yue, Zhang Yong-Ping, Chen Zhi-Zhan, Cheng Yue, Tan Jia-Hui, Shi Wang-Zhou.Effect of different annealing treatment methods on the Ni/SiC contact interface properties. Acta Physica Sinica, 2015, 64(6): 067303.doi:10.7498/aps.64.067303 |
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Zhang Bei, Bao An, Chen Chu, Zhang Jun.Density-functional theory study of ConCm (n=15, m=1,2) clusters. Acta Physica Sinica, 2012, 61(15): 153601.doi:10.7498/aps.61.153601 |
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Yuan Jian-Mei, Hao Wen-Ping, Li Shun-Hui, Mao Yu-Liang.Density functional study on the adsorption of C atoms on Ni (111) surface. Acta Physica Sinica, 2012, 61(8): 087301.doi:10.7498/aps.61.087301 |
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Tang Chun-Mei, Guo Wei, Zhu Wei-Hua, Liu Ming-Yi, Zhang Ai-Mei, Gong Jiang-Feng, Wang Hui.Density functional calculations of geomatric structure, electronic structure, stability, and magnetic properties of transitional atom endohedral unclassical fullerene M@C22(M=Sc,Ti, V, Cr, Mn, Fe, Co and Ni). Acta Physica Sinica, 2012, 61(2): 026101.doi:10.7498/aps.61.026101 |
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin.Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica, 2012, 61(2): 027202.doi:10.7498/aps.61.027202 |
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Cao Qing-Song, Yuan Yong-Bo, Xiao Chuan-Yun, Lu Rui-Feng, Kan Er-Jun, Deng Kai-Ming.Density functional study on the geometric and electronic properties of C80H80. Acta Physica Sinica, 2012, 61(10): 106101.doi:10.7498/aps.61.106101 |
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Zhang Xiu-Rong, Wu Li-Qing, Rao Qian.Theoretical study of electronic structure and optical properties of OsnN0,(n=1 6) clusters. Acta Physica Sinica, 2011, 60(8): 083601.doi:10.7498/aps.60.083601 |
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Zhao Cheng-Li, Lü Xiao-Dan, Ning Jian-Ping, Qing You-Min, He Ping-Ni, Gou Fu-Jun.Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100). Acta Physica Sinica, 2011, 60(9): 095203.doi:10.7498/aps.60.095203 |
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Tang Hui-Shuai, Zhang Xiu-Rong, Gao Cong-Hua, Wu Li-Qing.The theory study of electronic structures and spectram properties of WnNim(n+m≤7; m=1, 2) clusters. Acta Physica Sinica, 2010, 59(8): 5429-5438.doi:10.7498/aps.59.5429 |
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Zhang Yun, Shao Xiao-Hong, Wang Zhi-Qiang.A first principle study on p-type doped 3C-SiC. Acta Physica Sinica, 2010, 59(8): 5652-5660.doi:10.7498/aps.59.5652 |
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Chen Liang, Xu Can, Zhang Xiao-Fang.Electronic properties of MgO nanotube clusters studied with density functional theory. Acta Physica Sinica, 2009, 58(3): 1603-1607.doi:10.7498/aps.58.1603 |
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Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa.The study of optimal fitting parameter for C 1s spectra of SiC surface. Acta Physica Sinica, 2008, 57(7): 4125-4129.doi:10.7498/aps.57.4125 |
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Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa.Study on the chemical states of the surface of SiC epilayer. Acta Physica Sinica, 2008, 57(7): 4119-4124.doi:10.7498/aps.57.4119 |
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Gao Jin-Xia, Zhang Yi-Men, Tang Xiao-Yan, Zhang Yu-Ming.Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET. Acta Physica Sinica, 2006, 55(6): 2992-2996.doi:10.7498/aps.55.2992 |
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Shang Ye-Chun, Liu Zhong-Li, Wang Shu-Rui.Study on the reverse characteristics of Ti/6H-SiC Schottky contacts. Acta Physica Sinica, 2003, 52(1): 211-216.doi:10.7498/aps.52.211 |
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