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Li Jun-Wei, Jia Wei-Min, Lü Sha-Sha, Wei Ya-Xuan, Li Zheng-Cao, Wang Jin-Tao.First principles study of hydrogen adsorption and dissociation behavior on γ-U (100)/Mo surface. Acta Physica Sinica, 2022, 71(22): 226601.doi:10.7498/aps.71.20220631 |
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Li Rui-Hao, Liu Jun-Yang, Hong Wen-Jing.Regulation strategies based on quantum interference in electrical transport of single-molecule devices. Acta Physica Sinica, 2022, 71(6): 067303.doi:10.7498/aps.71.20211819 |
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.Regulation strategies based on quantum interference in electrical transport of single-molecule devices. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211819 |
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Zu Feng-Xia, Zhang Pan-Pan, Xiong Lun, Yin Yong, Liu Min-Min, Gao Guo-Ying.Design and electronic transport properties of organic thiophene molecular rectifier with the graphene electrodes. Acta Physica Sinica, 2017, 66(9): 098501.doi:10.7498/aps.66.098501 |
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Fu Jia, Fan Qun-Chao, Sun Wei-Guo, Hu Shi, Jiang Yong-Hong.Studies on the R-branch emission spectral lines of VN molecules. Acta Physica Sinica, 2013, 62(23): 233301.doi:10.7498/aps.62.233301 |
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Li Ying-De, Li Zong-Liang, Leng Jian-Cai, Li Wei, Wang Chuan-Kui.Theoretical study on switching characteristic of photoisomers. Acta Physica Sinica, 2011, 60(7): 073101.doi:10.7498/aps.60.073101 |
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Zhang Hui, Zhang Guo-Ying, He Jun-Qi, Wang Dan, Yang Shuang.The influence of impurities on segregation of the (110) surface of O/RhxPt1-x alloy system. Acta Physica Sinica, 2008, 57(3): 1846-1850.doi:10.7498/aps.57.1846 |
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Xia Cai-Juan, Fang Chang-Feng, Hu Gui-Chao, Li Dong-Mei, Liu De-Sheng, Xie Shi-Jie, Zhao Ming-Wen.Effect of side groups on the electronic transport properties of molecular devices. Acta Physica Sinica, 2008, 57(5): 3148-3154.doi:10.7498/aps.57.3148 |
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Liu Yi-Liang, Kong Fan-Jie, Yang Bin-Wei, Jiang Gang.The ab-initio study of diamond growth on its (111) surface. Acta Physica Sinica, 2007, 56(9): 5413-5417.doi:10.7498/aps.56.5413 |
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Xia Cai-Juan, Fang Chang-Feng, Hu Gui-Chao, Li Dong-Mei, Liu De-Sheng, Xie Shi-Jie.Effect of the relative orientation of molecules on the electronic transport property of molecular devices. Acta Physica Sinica, 2007, 56(8): 4884-4890.doi:10.7498/aps.56.4884 |
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Tang Yuan-Hong, Lin Liang-Wu, Guo Chi.Hydrogen storage mechanism of multiwalled carbon nanotube bundles studied by X-ray absorption spectra. Acta Physica Sinica, 2006, 55(8): 4197-4201.doi:10.7498/aps.55.4197 |
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Ma Yong, Zou Bin, Li Zong-Liang, Wang Chuan-Kui, Luo Yi.Theoretical studies on electronic transport properties of six-membered heterocyclic molecules. Acta Physica Sinica, 2006, 55(4): 1974-1978.doi:10.7498/aps.55.1974 |
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Li Ying-De.A theoretical study of electrical properties of molecular junction. Acta Physica Sinica, 2006, 55(6): 2997-3002.doi:10.7498/aps.55.2997 |
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Li Gui-Qin, Deng Jing-Kang, Li Bin, Ren Xue-Guang, Ning Chuan-Gang, Zhang Shu-Feng, Su Guo-Lin.EMS investigation of inner valance orbital 1a" for butanone. Acta Physica Sinica, 2005, 54(10): 4669-4672.doi:10.7498/aps.54.4669 |
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Zhang Hui, Zhang Guo-Ying, Wang Rui-Dan, Zhou Yong-Jun, Li Xing.Influence of O adsorbed on different surfaces of NixCu1－x on the segregation of Cu. Acta Physica Sinica, 2005, 54(11): 5356-5361.doi:10.7498/aps.54.5356 |
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Zou Bin, Li Zong-Liang, Wang Chuan-Kui, Xue Qi-Kun.Effect of the distance between electrodes on the electronic transport properties of single molecular devices. Acta Physica Sinica, 2005, 54(3): 1341-1346.doi:10.7498/aps.54.1341 |
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Zhang Hui, Zhang Guo-Ying, Li Xing, Liu Shi-Yang.The chemisorption of CO on a disordered binary alloy (NixCu1－x) and the mutual influence of chemisorption and surface segregation. Acta Physica Sinica, 2004, 53(9): 3152-3156.doi:10.7498/aps.53.3152 |
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Li Hong-Hai, Li Ying-De, Wang Chuan-Kui.. Acta Physica Sinica, 2002, 51(6): 1239-1243.doi:10.7498/aps.51.1239 |
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WU YUE, CAO PEI-LIN, CHEN YUN-QI, ZHENG DE-JUAN.INVESTIGATION OF CO AND NO CHEMISORPTION ON THE Ⅷ GROUP TRANSITION METAL SURFACE BY Xα-DV METHOD(Ⅱ)——CHEMISORPTION OP NO ON PD(111) SURFACE. Acta Physica Sinica, 1985, 34(10): 1306-1314.doi:10.7498/aps.34.1306 |
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CHANG I-MIN.THE PRESENT STATUS OF SOLID STATE ELECTRONICS. Acta Physica Sinica, 1960, 16(8): 431-440.doi:10.7498/aps.16.431 |
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