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Gao Jian, Li Jian-Ying.Influence of confined phase transition on dielectric relaxation characteristics of thermochromic epoxy insulating materials. Acta Physica Sinica, 2023, 72(10): 107701.doi:10.7498/aps.72.20230253 |
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Yu Sen-Jiang.Atomic force microscopy studies on self-organized wrinkles in constrained metallic films deposited on silicone oil substrates. Acta Physica Sinica, 2014, 63(11): 116801.doi:10.7498/aps.63.116801 |
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Wu Zhen-Yu, Yang Yin-Tang, Chai Chang-Chun, Liu Li, Peng Jie, Wei Jing-Tian.A microstructure-based study on electromigration in Cu interconnects. Acta Physica Sinica, 2012, 61(1): 018501.doi:10.7498/aps.61.018501 |
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Wu Zhen-Yu, Dong Si-Wan, Liu Yi, Chai Chang-Chun, Yang Yin-Tang.Resistometric study on electromigration failure in copper interconnects. Acta Physica Sinica, 2012, 61(24): 248501.doi:10.7498/aps.61.248501 |
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Hu Yong, Yan Hong-Hong, Lin Tao, Li Jin-Fu, Zhou Yao-He.Free volume evolution of pre-annealed Zr55Al10Ni5Cu30 bulk metallic glass during rolling. Acta Physica Sinica, 2012, 61(8): 087102.doi:10.7498/aps.61.087102 |
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Huang Ming-Liang, Chen Lei-Da, Zhou Shao-Ming, Zhao Ning.Effect of electromigration on interfacial reaction in Ni/Sn3.0Ag0.5Cu/Au/Pd/Ni-P flip chip solder joints. Acta Physica Sinica, 2012, 61(19): 198104.doi:10.7498/aps.61.198104 |
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Chen Yan, Jiang Min-Qiang, Dai Lan-Hong.Temperature-dependent yield asymmetry between tension and compression in metallic glasses. Acta Physica Sinica, 2012, 61(3): 036201.doi:10.7498/aps.61.036201 |
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He Liang, Du Lei, Huang Xiao-Jun, Chen Hua, Chen Wen-Hao, Sun Peng, Han Liang.Non-Gaussian analysis of noise for metal interconnection electromigration. Acta Physica Sinica, 2012, 61(20): 206601.doi:10.7498/aps.61.206601 |
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Lu Yu-Dong, He Xiao-Qi, En Yun-Fei, Wang Xin, Zhuang Zhi-Qiang.Directional diffusion of atoms in metal strips/bump interconnects of flip chip. Acta Physica Sinica, 2010, 59(5): 3438-3444.doi:10.7498/aps.59.3438 |
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Lu Yu-Dong, He Xiao-Qi, En Yun-Fei, Wang Xin, Zhuang Zhi-Qiang.Electromigration in Sn3.0Ag0.5Cu flip chip solder joint. Acta Physica Sinica, 2009, 58(3): 1942-1947.doi:10.7498/aps.58.1942 |
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Wu Ying-Cai, Gu Zheng-Tian.Research on the optimum thickness of metallic thin film utilized to excite surface plasmon resonance. Acta Physica Sinica, 2008, 57(4): 2295-2299.doi:10.7498/aps.57.2295 |
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Li Ming-Yu, Gu Pei-Fu, Zhang Jin-Long, Zheng Zhen-Rong, Liu Xu.Study on the property of subwavelength imaging in a metal thin-film structure. Acta Physica Sinica, 2008, 57(7): 4564-4569.doi:10.7498/aps.57.4564 |
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He Liang, Du Lei, Zhuang Yi-Qi, Li Wei-Hua, Chen Jian-Ping.Multiscale entropy complexity analysis of metallic interconnection electromigration noise. Acta Physica Sinica, 2008, 57(10): 6545-6550.doi:10.7498/aps.57.6545 |
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.The surface mapping and crystal orientation of body-centered cubic thin metal tungsten films of different thickness. Acta Physica Sinica, 2007, 56(12): 7248-7254.doi:10.7498/aps.56.7248 |
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Chen Chun-Xia, Du Lei, He Liang, Hu Jin, Huang Xiao-Jun, Wei Tao.Fractal character of noise in electromigration in metel interconnection. Acta Physica Sinica, 2007, 56(11): 6674-6679.doi:10.7498/aps.56.6674 |
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.Research on noise correlation dimension of metallic interconnection electromigration. Acta Physica Sinica, 2007, 56(12): 7176-7182.doi:10.7498/aps.56.7176 |
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Zhang Wen-Jie, Yi Wan-Bing, Wu Jin.Electromigration in Al interconnects and the challenges in ultra-deep submicron technology. Acta Physica Sinica, 2006, 55(10): 5424-5434.doi:10.7498/aps.55.5424 |
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Li Gong, Sun Yi-Nan, Gao Yun-Peng, Zhang Xin-Yu, Luo Cong-Ju, Liu Ri-Ping.Study on free volume change in the NiP amorphous alloy under high pressure using synchrotron radiation. Acta Physica Sinica, 2006, 55(10): 5394-5397.doi:10.7498/aps.55.5394 |
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Zong Zhao-Xiang, Du Lei, Zhuang Yi-Qi, He Liang, Wu Yong.Modeling of resistance changes based on the free volume in VLSI interconnection electromigration. Acta Physica Sinica, 2005, 54(12): 5872-5878.doi:10.7498/aps.54.5872 |
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Wang Jing-Feng, Liu Lin, Pu Jian, Xiao Jian-Zhong.The rheological behavior of bulk metallic glass Zr41Ti14Cu12.5Ni10Be22.5. Acta Physica Sinica, 2004, 53(6): 1916-1922.doi:10.7498/aps.53.1916 |
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