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Wang Yi-Lin, Lan Zi-Xuan, Du Hui-Wei, Zhao Lei, Ma Zhong-Quan.Phosphorus oxides in heavily doped polysilicon films. Acta Physica Sinica, 2022, 71(18): 188201.doi:10.7498/aps.71.20220706 |
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Wang Jian, Chuai Rong-Yan.Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration. Acta Physica Sinica, 2017, 66(24): 247201.doi:10.7498/aps.66.247201 |
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Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang.Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica, 2012, 61(2): 028104.doi:10.7498/aps.61.028104 |
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong.Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica, 2010, 59(12): 8770-8775.doi:10.7498/aps.59.8770 |
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Liu Li-Ying, Zhang Jia-Liang, Guo Qing-Chao, Wang De-Zhen.Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film. Acta Physica Sinica, 2010, 59(4): 2653-2660.doi:10.7498/aps.59.2653 |
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Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen.Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica, 2010, 59(4): 2775-2782.doi:10.7498/aps.59.2775 |
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Qiu Sheng-Hua, Chen Cheng-Zhao, Liu Cui-Qing, Wu Yuan-Dan, Li Ping, Lin Xuan-Ying, Huang Chong, Yu Chu-Ying.Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth. Acta Physica Sinica, 2009, 58(1): 565-569.doi:10.7498/aps.58.565 |
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Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen.Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica, 2009, 58(9): 6560-6565.doi:10.7498/aps.58.6560 |
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Li Shi-Bin, Wu Zhi-Ming, Yuan Kai, Liao Nai-Man, Li Wei, Jiang Ya-Dong.Study on thermal conductivity of hydrogenated amorphous silicon films. Acta Physica Sinica, 2008, 57(5): 3126-3131.doi:10.7498/aps.57.3126 |
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong.Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica, 2006, 55(5): 2523-2528.doi:10.7498/aps.55.2523 |
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Zhao Shu-Yun, Wu Chun-Ya, Liu Zhao-Jun, Li Xue-Dong, Wang Zhong, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang.Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source. Acta Physica Sinica, 2006, 55(11): 6095-6100.doi:10.7498/aps.55.6095 |
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Hao Hui-Ying, Kong Guang-Lin, Zeng Xiang-Bo, Xu Ying, Diao Hong-Wei, Liao Xian-Bo.Transition films from amporphous to microcrystalline silicon and solar cells. Acta Physica Sinica, 2005, 54(7): 3327-3331.doi:10.7498/aps.54.3327 |
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Hao Hui-Ying, Kong Guang-Lin, Zeng Xiang-Bo, Xu Ying, Diao Hong-Wei, Liao Xian-Bo.Computer simulation of a-Si:H/μc-Si:H diphasic silicon solar cells. Acta Physica Sinica, 2005, 54(7): 3370-3374.doi:10.7498/aps.54.3370 |
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Lin Xuan-Ying, Huang Chuang-Jun, Lin Kui-Xun, Yu Yun-Peng, Yu Chu-Ying, Huang Rui.Raman analysis of microstructure of polycrystalline silicon films deposited at low-temperatures from SiCl4-H2. Acta Physica Sinica, 2004, 53(5): 1558-1561.doi:10.7498/aps.53.1558 |
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Yao Ruo-He, Huang Wen-Yong, Wei Jun-Hong, Wang Zhao-Kui, Yu Chu-Ying.Control of grain size during low-temperature growth of polycrystalline silicon films. Acta Physica Sinica, 2004, 53(11): 3950-3955.doi:10.7498/aps.53.3950 |
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Chen Yi-Kuang, Lin Kui-Xun, Luo Zhi, Liang Rui-Sheng, Zhou Fu-Fang.Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films. Acta Physica Sinica, 2004, 53(2): 582-586.doi:10.7498/aps.53.582 |
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Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Ｑin.Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica, 2003, 52(11): 2934-2938.doi:10.7498/aps.52.2934 |
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Zhang Shi-Bin, Liao Xian-Bo, An Long, Yang Fu-Hua, Kong Guang-Lin, Wang Yong-Qian, Xu Yan-Yue, Chen Chang-Yong, Diao Hong-Wei.. Acta Physica Sinica, 2002, 51(8): 1811-1815.doi:10.7498/aps.51.1811 |
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HE DE-YAN.CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS. Acta Physica Sinica, 2001, 50(4): 779-783.doi:10.7498/aps.50.779 |
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HE YU-LIANG, ZHOU HENG-NAN, LIU XIANG-NA, CHENG GUANG-XU, YU SHI-DONG.STUDIES AND ANALYSIS FOR MICROSTRUCTURES OF MICRO-CRYSTALLIZATION PROCESS OF AMORPHOUS SILICON FILMS. Acta Physica Sinica, 1990, 39(11): 1796-1802.doi:10.7498/aps.39.1796 |
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