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Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
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Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Chen Yi-Qiang, Lu Guo-Guang, Huang Yun.Damage mechanism of SiC Schottky barrier diode irradiated by heavy ions. Acta Physica Sinica, 2022, 71(17): 176101.doi:10.7498/aps.71.20220628 |
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Yan Da-Wei, Tian Kui-Kui, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Li Jin-Xiao, Cao Yan-Rong, Gu Xiao-Feng.Forward current transport and noise behavior of GaN Schottky diodes. Acta Physica Sinica, 2021, 70(8): 087201.doi:10.7498/aps.70.20201467 |
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Huang Wei, Li Yue-Long, Ren Hui-Zhi, Wang Peng-Yang, Wei Chang-Chun, Hou Guo-Fu, Zhang De-Kun, Xu Sheng-Zhi, Wang Guang-Cai, Zhao Ying, Yuan Ming-Jian, Zhang Xiao-Dan.Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer. Acta Physica Sinica, 2019, 68(12): 128103.doi:10.7498/aps.68.20190258 |
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Ji Zeng-Chao, Chen Shi-Xiu, Gao Shen, Chen Jun, Tian Wei.Analysis on mechanism of radiating microwave from vacuum diode. Acta Physica Sinica, 2016, 65(14): 145202.doi:10.7498/aps.65.145202 |
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Lan Lin-Feng, Zhang Peng, Peng Jun-Biao.Research progress on oxide-based thin film transisitors. Acta Physica Sinica, 2016, 65(12): 128504.doi:10.7498/aps.65.128504 |
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Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou.Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica, 2014, 63(12): 127201.doi:10.7498/aps.63.127201 |
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Zhang Xue-Zhi, Feng Ming, Zhang Xin-Zheng.All-optical diode in mid-infrared waveband based on self-phase modulation effect in silicon ring resonator. Acta Physica Sinica, 2013, 62(2): 024201.doi:10.7498/aps.62.024201 |
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Liu Mu-Lin, Min Qiu-Ying, Ye Zhi-Qing.Efficiency droop in blue InGaN/GaN light emitting diodes on Si substrate. Acta Physica Sinica, 2012, 61(17): 178503.doi:10.7498/aps.61.178503 |
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Ding Wen-Ge, Sang Yun-Gang, Yu Wei, Yang Yan-Bin, Teng Xiao-Yun, Fu Guang-Sheng.Current transport mechanism in silicon-rich silicon nitride/c-Si heterojunction. Acta Physica Sinica, 2012, 61(24): 247304.doi:10.7498/aps.61.247304 |
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Sun Peng, Du Lei, He Liang, Chen Wen-Hao, Liu Yu-Dong, Zhao Ying.Radiation degradation mechanism of pn-junction diode based on 1/f noise variation. Acta Physica Sinica, 2012, 61(12): 127808.doi:10.7498/aps.61.127808 |
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Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica, 2010, 59(7): 5002-5009.doi:10.7498/aps.59.5002 |
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Sun Hui, Zhang Qi-Feng, Wu Jin-Lei.Ultraviolet light emitting diode based on ZnO nanowires. Acta Physica Sinica, 2007, 56(6): 3479-3482.doi:10.7498/aps.56.3479 |
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Zhang Jian-Ming, Zou De-Shu, Liu Si-Nan, Xu Chen, Shen Guang-Di.A novel AlGaInP thin-film light emitting diode with omni directional reflector. Acta Physica Sinica, 2007, 56(5): 2905-2909.doi:10.7498/aps.56.2905 |
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Yu Wei, Wang Bao-Zhu, Yang Yan-Bin, Lu Wan-Bing, Fu Guang-Sheng.Optical emission diagnosis of helicon-wave-plasma-enhanced chemical vapor deposition of nanocrystalline silicon. Acta Physica Sinica, 2005, 54(5): 2394-2398.doi:10.7498/aps.54.2394 |
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LI HONG-WEI, WANG TAI-HONG.THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica, 2001, 50(12): 2501-2505.doi:10.7498/aps.50.2501 |
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LI HONG-WEI, WANG TAI-HONG.CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica, 2001, 50(2): 262-267.doi:10.7498/aps.50.262 |
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LIU XIANG-NA, XU GANG-YI, SUI YUN-XIA, HE YU-LIANG, BAO XI-MAO.INVESTIGATIONS INTO ELECTRON SPIN RESONANCE IN DOPED NANOCRYSTALLINE SILICON FILMS. Acta Physica Sinica, 2001, 50(3): 512-516.doi:10.7498/aps.50.512 |
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XU GANG-YI, WANG TIAN-MIN, HE YU-LIANG, MA ZHI-XUN, ZHENG GUO-ZHEN.THE TRANSPORT MECHANISM IN NANOCRYSTALLINE SILICON FILMS AT LOW TEMPERATURE. Acta Physica Sinica, 2000, 49(9): 1798-1803.doi:10.7498/aps.49.1798 |
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ZHOU MIAN, WANG WEI-YUAN.CARRIER TRANSPORT IN METAL-THIN INSULATOR n GaAs BARRIER DIODES. Acta Physica Sinica, 1984, 33(11): 1485-1494.doi:10.7498/aps.33.1485 |
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