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Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue.Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2024, 73(3): 036103.doi:10.7498/aps.73.20221360 |
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Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
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Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou.Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor. Acta Physica Sinica, 2019, 68(24): 247203.doi:10.7498/aps.68.20191153 |
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Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao.Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica, 2019, 68(24): 248501.doi:10.7498/aps.68.20191311 |
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Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong.Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica, 2018, 67(17): 178501.doi:10.7498/aps.67.20180474 |
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Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang.Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer. Acta Physica Sinica, 2017, 66(16): 167301.doi:10.7498/aps.66.167301 |
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Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong.High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica, 2016, 65(16): 168501.doi:10.7498/aps.65.168501 |
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Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
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Li Jia-Dong, Cheng Jun-Jie, Miao Bin, Wei Xiao-Wei, Zhang Zhi-Qiang, Li Hai-Wen, Wu Dong-Min.Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors. Acta Physica Sinica, 2014, 63(7): 070204.doi:10.7498/aps.63.070204 |
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng.Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2013, 62(15): 157202.doi:10.7498/aps.62.157202 |
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
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Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei.High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica, 2010, 59(10): 7333-7337.doi:10.7498/aps.59.7333 |
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Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min.Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121.doi:10.7498/aps.56.4117 |
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Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Cui Li-Jie, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems. Acta Physica Sinica, 2007, 56(7): 4099-4104.doi:10.7498/aps.56.4099 |
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Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming.The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica, 2007, 56(10): 6013-6018.doi:10.7498/aps.56.6013 |
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Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping.Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness. Acta Physica Sinica, 2007, 56(8): 4955-4959.doi:10.7498/aps.56.4955 |
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Zhu Bo, Gui Yong-Sheng, Zhou Wen-Zheng, Shang Li-Yan, Guo Shao-Ling, Chu Jun-Hao, Lü Jie, Tang Ning, Shen Bo, Zhang Fu-Jia.The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas. Acta Physica Sinica, 2006, 55(5): 2498-2503.doi:10.7498/aps.55.2498 |
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Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min.A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica, 2006, 55(7): 3617-3621.doi:10.7498/aps.55.3617 |
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Lv YONG-LIANG, ZHOU SHI-PING, XU DE-MING.ANALYSIS OF PROPERTIES OF HIGH-ELECTRON-MOBILITY-TRANSISTOR UNDER OPTICAL ILLUMI NATION. Acta Physica Sinica, 2000, 49(7): 1394-1399.doi:10.7498/aps.49.1394 |
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