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Han Ze-Yu, Song Cheng-Ji, Zhou Jie, Zheng Fu.Effects of underlayer on structures and magnetic properties of Fe65Co35alloy films. Acta Physica Sinica, 2022, 71(15): 157501.doi:10.7498/aps.71.20220476 |
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Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
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Xie Tian-Ci, Zhang Bin, He Bo, Li Hao-Peng, Qin Zhuang, Qian Jin-Qian, Shi Qie-Ming, Lewis Elfed, Sun Wei-Min.Mathematical algorithm model of absolute dose in radiotherapy. Acta Physica Sinica, 2021, 70(1): 018701.doi:10.7498/aps.70.20200986 |
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Yao Ke-Fu, Shi Ling-Xiang, Chen Shuang-Qin, Shao Yang, Chen Na, Jia Ji-Li.Research progress and application prospect of Fe-based soft magnetic amorphous/nanocrystalline alloys. Acta Physica Sinica, 2018, 67(1): 016101.doi:10.7498/aps.67.20171473 |
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Cao Cheng-Cheng, Fan Jue-Wen, Zhu Li, Meng Yang, Wang Yin-Gang.Effects of relaxation time on local structural and magnetic properties of Fe80.8B10P8Cu1.2 amorphous alloy. Acta Physica Sinica, 2017, 66(16): 167501.doi:10.7498/aps.66.167501 |
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Zhang Cun-Bo, Yan Tao, Yang Zhi-Qiang, Ren Wei-Tao, Zhu Zhan-Ping.heoretical model of influence of frequency on thermal breakdown in semiconductor device. Acta Physica Sinica, 2017, 66(1): 018501.doi:10.7498/aps.66.018501 |
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Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming.Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica, 2016, 65(1): 018501.doi:10.7498/aps.65.018501 |
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Song Jian-Jun, Yang Chao, Zhu He, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Shu Bin.Structure design and frequency characteristics of SOI SiGe HBT. Acta Physica Sinica, 2014, 63(11): 118501.doi:10.7498/aps.63.118501 |
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
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Zhang Ya-Nan, Wang You-Jun, Kong Ling-Ti, Li Jin-Fu.Influence of Y addition on the glass forming ability and soft magnetic properties of Fe-Si-B amorphous alloy. Acta Physica Sinica, 2012, 61(15): 157502.doi:10.7498/aps.61.157502 |
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Jiang Zhi-Hong, Wang Hui, Gao Chao.A evolving network model generated by random walk and policy attachment. Acta Physica Sinica, 2011, 60(5): 058903.doi:10.7498/aps.60.058903 |
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong.An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica, 2011, 60(9): 097302.doi:10.7498/aps.60.097302 |
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Zhang Feng-Kui, Ding Yong-Jie.Features of electron-wall collision frequency with saturated sheath in Hall thruster. Acta Physica Sinica, 2011, 60(6): 065203.doi:10.7498/aps.60.065203 |
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Li Qi, Zhang Bo, Li Zhao-Ji.A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica, 2008, 57(3): 1891-1896.doi:10.7498/aps.57.1891 |
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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508.doi:10.7498/aps.56.3504 |
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Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng.Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica, 2006, 55(7): 3622-3628.doi:10.7498/aps.55.3622 |
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Lu Cao-Wei, Lu Zhi-Chao, Sun Ke, Li De-Ren, Zhou Shao-Xiong.Magnetic properties of amorphous Fe74Al4Sn2P10C2B4Si4 powder prepared by water atomization and powder core made from it. Acta Physica Sinica, 2006, 55(5): 2553-2556.doi:10.7498/aps.55.2553 |
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Yang Quan-Min, Wang Ling-Ling, Sun De-Cheng.Theoretical study on the influence of the microstructure of Fe73.5Cu1Nb3Si13.5B9 on its giant magneto-impedance effect. Acta Physica Sinica, 2005, 54(12): 5730-5737.doi:10.7498/aps.54.5730 |
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua.A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica, 2003, 52(8): 2046-2051.doi:10.7498/aps.52.2046 |
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LIU HONG-XIA, FANG JIAN-PING, HAO YUE.EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(6): 1172-1177.doi:10.7498/aps.50.1172 |
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